Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Leonardo Ranasinghe"'
Publikováno v:
Nanomaterials, Vol 13, Iss 24, p 3121 (2023)
The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone–shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size. The QDs are fabricated by filling
Externí odkaz:
https://doaj.org/article/803f610936a94782b32361ac859c4ae8
Publikováno v:
Nanomaterials, Vol 13, Iss 10, p 1696 (2023)
The optical emission of cone-shell quantum structures (CSQS) under vertical electric (F) and magnetic (B) fields is studied by means of simulations. A CSQS has a unique shape, where an electric field induces the transformation of the hole probability
Externí odkaz:
https://doaj.org/article/3f345fe845454aa0aa24302ffc538a9c
Autor:
Christian Heyn, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, Carlos A. Duque, Wolfgang Hansen
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 857 (2023)
Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE). During MBE, Al droplets are deposited on an AlGaAs surface, which th
Externí odkaz:
https://doaj.org/article/d564565fdb704965a824353751722cfa
Autor:
Christian Heyn, Andreas Gräfenstein, Geoffrey Pirard, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, Gabriel Bester, Wolfgang Hansen
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 2981 (2022)
Strain-free GaAs quantum dots (QDs) are fabricated by filling droplet-etched nanoholes in AlGaAs. Using a template of nominally identical nanoholes, the QD size is precisely controlled by the thickness of the GaAs filling layer. Atomic force microsco
Externí odkaz:
https://doaj.org/article/daf774655ae54f9c9585aaec50d6e365
Autor:
Hans Georg Babin, Julian Ritzmann, Nikolai Bart, Marcel Schmidt, Timo Kruck, Liang Zhai, Matthias C. Löbl, Giang N. Nguyen, Clemens Spinnler, Leonardo Ranasinghe, Richard J. Warburton, Christian Heyn, Andreas D. Wieck, Arne Ludwig
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2703 (2021)
In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the paramet
Externí odkaz:
https://doaj.org/article/f3439d8f7bb643bba72dd9c7bf4fe043
Autor:
Leonardo Ranasinghe, Christian Heyn, Kristian Deneke, Michael Zocher, Roman Korneev, Wolfgang Hansen
Publikováno v:
Nanomaterials, Vol 11, Iss 3, p 690 (2021)
Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room te
Externí odkaz:
https://doaj.org/article/9cc924d18014468fa21ceea57d0a42a3
Autor:
Christian Heyn, Roman Korneev, Michael Zocher, Wolfgang Hansen, Kristian Deneke, Leonardo Ranasinghe
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 690, p 690 (2021)
Volume 11
Issue 3
Nanomaterials, Vol 11, Iss 690, p 690 (2021)
Volume 11
Issue 3
Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::957d1e0797e096e833be11c7dece0544
Publikováno v:
The Journal of Physical Chemistry C
The impact of charge noise on the line width of the optical emission from semiconductor quantum dots (QDs) is studied using simulations. Several basic dot shapes with varied sizes are addressed: sp...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bca69a6734adcf78f6bcef4caebd44f5
Publikováno v:
Nanomaterials (2079-4991); Dec2023, Vol. 13 Issue 24, p3121, 11p
Publikováno v:
Nanomaterials (2079-4991); May2023, Vol. 13 Issue 10, p1696, 10p