Zobrazeno 1 - 4
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pro vyhledávání: '"Leonardo G. Vega Macotela"'
Autor:
Leonardo G. Vega Macotela, Georgiy Polupan, Tetyana Torchynska, Arturo Escobosa Echavarría, Ricardo Cisneros Tamayo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2643-2649
GaAs/Al0.30Ga0.70As/AlGaInAs/ heterostructures grown by molecular beam epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after thermal annealing at 640 °C for 2 h. Two types of QD structures with the different compositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d6a1e2fdca24de1fc530026582beca
https://doi.org/10.1007/s10854-019-02803-x
https://doi.org/10.1007/s10854-019-02803-x
Publikováno v:
MRS Proceedings. 1534:A63-A68
The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The paramete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af2384af7db2202db7238f9e0f2f028
https://doi.org/10.1557/opl.2013.300
https://doi.org/10.1557/opl.2013.300
Publikováno v:
MRS Proceedings. 1617:13-18
The high resolution X ray diffraction (HR-XRD) diagrams have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The paramete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81f0a4580510f3b4074417a218dd479
https://doi.org/10.1557/opl.2013.1157
https://doi.org/10.1557/opl.2013.1157
Publikováno v:
MRS Proceedings. 1534:A75-A80
The structure of the symmetric GaAs/In0.15 Ga0.85GaAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) has been studied using High resolution X-ray diffraction HR-XRD method. The QDs were grown at different temperatures from the range 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8bf2776986571b5cfa6beff66533248
https://doi.org/10.1557/opl.2013.302
https://doi.org/10.1557/opl.2013.302