Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Leonardo Cancellara"'
Autor:
Anton Muhin, Martin Guttmann, Verena Montag, Norman Susilo, Eviathar Ziffer, Luca Sulmoni, Sylvia Hagedorn, Neysha Lobo-Ploch, Jens Rass, Leonardo Cancellara, Shaojun Wu, Tim Wernicke, Michael Kneissl
Publikováno v:
physica status solidi (a). :2200458
Autor:
Leonardo Cancellara, Anna Mogilatenko, Sylvia Hagedorn, Dominik Jaeger, Sebastian Walde, Markus Weyers, Martin Albrecht
Publikováno v:
Journal of Crystal Growth. 512:142-146
In this work we investigated annealing of 350 nm and 450 nm thick sputtered (SP) AlN on sapphire in the temperature range from 1650 °C to 1730 °C. The most distinct decrease in the threading dislocation density (TDD), from initially 3 × 1010 cm−
Autor:
Lucinda Matiwe, Carsten Hartmann, Leonardo Cancellara, Matthias Bickermann, Andrew Klump, Jürgen Wollweber, Sylvia Hagedorn, Markus Weyers, Thomas Straubinger
Publikováno v:
physica status solidi (a). 219:2100707
Autor:
Ramon Collazo, Sylvia Hagedorn, Tobias Schulz, Toni Markurt, Sebastian Walde, Markus Weyers, Leonardo Cancellara, Martin Albrecht, Shun Washiyama, Zlatko Sitar
Publikováno v:
Journal of Applied Physics. 130:203101
Recovery of epitaxial AlN films on sapphire at high temperatures is now an established process to produce pseudo-substrates with high crystalline perfection, which can be used to grow epitaxial structures for UV-light-emitting devices. To elucidate t
Autor:
Sylvia Hagedorn, Arne Knauer, Anna Mogilatenko, Sebastian Walde, Markus Weyers, Jonas Weinrich, Tim Kolbe, Leonardo Cancellara
Publikováno v:
Crystal Research and Technology. 55:1900215
Autor:
Sylvia Hagedorn, Tim Wernicke, Jens Rass, Michael Kneissl, Eviathar Ziffer, Martin Guttmann, Shaojun Wu, Markus Weyers, Norman Susilo, Martin Albrecht, Leonardo Cancellara, Neysha Lobo Ploch, Sebastian Walde, Luca Sulmoni, Carsten Netzel
Publikováno v:
Photonics Research. 8:589
We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) emitting at 265 nm grown on stripe-patterned high-temperature annealed (HTA) epitaxially laterally overgrown (ELO) aluminium nitride (AlN)/sapphire templates
Autor:
Sylvia Hagedorn, Tim Wernicke, Anna Mogilatenko, Arne Knauer, Markus Weyers, Sebastian Walde, Daniel Pacak, Michael Kneissl, Leonardo Cancellara, Carsten Netzel, Carsten Hartmann, Norman Susilo
Publikováno v:
physica status solidi (a). 217:1901022