Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Leonard M. De La Cruz"'
Autor:
Leonard M. De La Cruz, Mahesh R. Neupane, Dmitry Ruzmetov, Tony Ivanov, James Weil, A. G. Birdwell, Pankaj B. Shah
Publikováno v:
Radar Sensor Technology XXV.
High power radio frequency (RF) transfer-doped diamond field effect transistors (FETs) are being fabricated at the Army Research Laboratory (ARL). To implement these into radar systems we have a parallel effort to extract accurate compact models from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1978fda988d9db00a683a6044c8eb8be
https://doi.org/10.1117/12.2585984
https://doi.org/10.1117/12.2585984
Autor:
A. G. Birdwell, Khamsouk Kingkeo, Mahesh R. Neupane, James Weil, Leonard M. De La Cruz, Dmitry Ruzmetov, Pankaj B. Shah, Tony Ivanov
Publikováno v:
Radar Sensor Technology XXV.
Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ae371912f34eb3b82dda66c0393ff0
https://doi.org/10.1117/12.2587818
https://doi.org/10.1117/12.2587818
Autor:
A. Glen Birdwell, Daniel Shoemaker, Kevin G. Crawford, Sukwon Choi, Tony Ivanov, Hiu Yung Wong, James Weil, Leonard M. De La Cruz, James Spencer Lundh, Pankaj B. Shah
Publikováno v:
Applied Physics Letters. 119:143502
In this report, the thermal performance of a hydrogen (H)-terminated diamond field-effect transistor (FET) is investigated using Raman spectroscopy and electrothermal device modeling. First, the thermal conductivity (κdiamond) of the active diamond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::562e8650b5c31b0b39ec83977961eb41
https://doi.org/10.1063/5.0061948
https://doi.org/10.1063/5.0061948
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
Current status of the GeTe phase change research at ARL is presented. The work covers determination of the power handling limits, both in ON and OFF condition, for state-of-the-art PCS technology. Maximum ON-state power handling, after 50 conditionin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b58220a463ac07d7a0b2c36c3efd6e
https://doi.org/10.1109/mwsym.2018.8439464
https://doi.org/10.1109/mwsym.2018.8439464
Autor:
Mathew King, El-Hinnawy Nabil, Tony Ivanov, Mona Zaghloul, Sami Hawasli, Pavel Borodulin, Robert M. Young, Leonard M. De La Cruz
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
The dependence of on-state Germanium Telluride (GeTe) RF power handling as a function of device cycling is presented. The data is also compared to computer based models in order to determine a possible method of failure at high RF input powers. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d867379cad8fa7a977231134c592fcbc
https://doi.org/10.1109/mwsym.2017.8059100
https://doi.org/10.1109/mwsym.2017.8059100
Publikováno v:
2016 IEEE International Symposium on Antennas and Propagation (APSURSI).
This paper discusses the viability of using Germanium Telluride (GeTe) thin films as reconfigurable antennas. The reconfiguration technique is based on altering the phase of GeTe from a conductive crystalline state to a highly resistive amorphous sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::557023f10c54187c2f3784473a9d9af7
https://doi.org/10.1109/aps.2016.7696234
https://doi.org/10.1109/aps.2016.7696234