Zobrazeno 1 - 10
of 171
pro vyhledávání: '"Leon Shterengas"'
Autor:
Nikolai B. Chichkov, Amit Yadav, Franck Joulain, Solenn Cozic, Semyon V. Smirnov, Leon Shterengas, Julian Scheuermann, Robert Weih, Johannes Koeth, Sven Hofling, Ulf Hinze, Samuel Poulain, Edik U. Rafailov
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 1, Pp 1-7 (2023)
Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 $\mu$m. The
Externí odkaz:
https://doaj.org/article/a37e7787f3d54c19a54738c4bb22c96e
Autor:
Ruiyan Liu, Leon Shterengas, Aaron Stein, Gela Kipshidze, Dmitri Zakharov, Kim Kisslinger, Gregory L. Belenky
Publikováno v:
Photonics, Vol 9, Iss 12, p 891 (2022)
Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the lase
Externí odkaz:
https://doaj.org/article/32f46c1dde4e434d96d7693bc7c4a0ea
Publikováno v:
Photonics, Vol 3, Iss 2, p 27 (2016)
Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized u
Externí odkaz:
https://doaj.org/article/f6acd527b9c74453a92823174bd0f3f8
Publikováno v:
Journal of Electronic Materials. 50:5522-5528
Epitaxial regrowth of antimonide-based heterostructures is required either to improve device performance parameters or to achieve new functionalities. This work compares two major methods used for surface preparation for subsequent epitaxial regrowth
Publikováno v:
Applied Physics Letters. 122:131102
Continuous wave room temperature operation of 2 μm GaSb-based photonic-crystal surface-emitting diode lasers has been realized. The deep etched square mesa devices showed threshold current densities of 500 A/cm2 at 20 °C. The epi-side down mounted
Publikováno v:
Novel In-Plane Semiconductor Lasers XXI.
Publikováno v:
IEEE Photonics Technology Letters. 32:1017-1020
The interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well w
Autor:
Takashi Hosoda, Tao Feng, Gregory Belenky, Chu C. Teng, Gerard Wysocki, Jonas Westberg, Gela Kipshidze, Leon Shterengas, Alexey Belyanin
Publikováno v:
Journal of Lightwave Technology. 38:1895-1899
The passively mode-locked type-I quantum well cascade diode lasers operating near 2.7 and 3.2 μm generated trains of the ∼10 ps long pulses with average power up to 10 mW. The devices based on laser heterostructures with reinforced carrier confine
Autor:
Jiang Jiang, Gela Kipshidze, Gregory Belenky, Takashi Hosoda, Ruiyan Liu, Aaron Stein, Leon Shterengas
Publikováno v:
Electronics Letters. 56:388-390
The vacuum pocket retaining molecular beam epitaxial regrowth of the nano-patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 µm emitting laser heterostructure. The photonic dispersio
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics, 25(6):8909208. Institute of Electrical and Electronics Engineers
The papers in this special issue highlights the recent progress, challenges and trends in research on semiconductor lasers and innovative semiconductor laser technology development. The combination of invited and contributed papers offers a unique pe