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Autor:
Rok Venturini, Anže Mraz, Igor Vaskivskyi, Yevhenii Vaskivskyi, Damjan Svetin, Tomaž Mertelj, Leon Pavlovič, Jing Cheng, Genyu Chen, Priyanthi Amarasinghe, Syed B. Qadri, Sudhir B. Trivedi, Roman Sobolewski, Dragan Mihailovic
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::684a572813fd15b96e694f94c813b659