Zobrazeno 1 - 3
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pro vyhledávání: '"Leon Marcel Freddy Kaufmann"'
Publikováno v:
Extended Abstracts of the 1976 International Conference on Solid State Devices.
In recent years many attempts have been made to use the outstanding properties of GaAs for microwave devices such as Schottky diodes, FET's and transferred electron devices, especially in integrated circuits. Usually n-type layers ("active" layers) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e94c08bcac7b25b12b0755a599e5c38
https://doi.org/10.7567/ssdm.1976.b-1-6
https://doi.org/10.7567/ssdm.1976.b-1-6
Publikováno v:
Japanese Journal of Applied Physics. 16:107
In recent years many attempts have been made to use the outstanding properties of GaAs for microwave devices such as Schottky diodes, FET's and transferred electron devices, especially in integrated circuits. Usually n-type layers ("active" layers) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb7d1beed0d4bb4be51ef4b5c99c601
https://doi.org/10.7567/jjaps.16s1.107
https://doi.org/10.7567/jjaps.16s1.107
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