Zobrazeno 1 - 10
of 1 715
pro vyhledávání: '"Leon, A C"'
Autor:
Altincicek, Furkan M., Livadaru, Lucian, Leon, Christopher C., Chutora, Taras, Yuan, Max, Achal, Roshan, Croshaw, Jeremiah, Pitters, Jason, Wolkow, Robert
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wi
Externí odkaz:
http://arxiv.org/abs/2411.10625
Autor:
Wang, Zeheng, Wang, Fangzhou, Li, Liang, Wang, Zirui, van der Laan, Timothy, Leon, Ross C. C., Huang, Jing-Kai, Usman, Muhammad
This paper pioneers the use of quantum machine learning (QML) for modeling the Ohmic contact process in GaN high-electron-mobility transistors (HEMTs) for the first time. Utilizing data from 159 devices and variational auto-encoder-based augmentation
Externí odkaz:
http://arxiv.org/abs/2409.10803
Autor:
Chittock-Wood, Jacob F., Leon, Ross C. C., Fogarty, Michael A., Murphy, Tara, Patomäki, Sofia M., Oakes, Giovanni A., von Horstig, Felix-Ekkehard, Johnson, Nathan, Jussot, Julien, Kubicek, Stefan, Govoreanu, Bogdan, Wise, David F., Gonzalez-Zalba, M. Fernando, Morton, John J. L.
Leveraging the advanced manufacturing capabilities of the semiconductor industry promises to help scale up silicon-based quantum processors by increasing yield, uniformity and integration. Recent studies of quantum dots fabricated on 300 mm wafer met
Externí odkaz:
http://arxiv.org/abs/2408.01241
In scanning tunneling microscopy of molecules, an insulating buffer layer is often introduced to reduce interactions between adsorbed molecules and the substrate. Focusing on tunneling through the molecule's electronic transport gap, we demonstrate t
Externí odkaz:
http://arxiv.org/abs/2404.11956
Using scanning tunneling microscopy (STM), we experimentally and theoretically investigate isolated platinum phthalocyanine (PtPc) molecules adsorbed on atomically thin NaCl(100) vapor deposited on Au(111). We obtain good agreement between theory and
Externí odkaz:
http://arxiv.org/abs/2401.14937
Publikováno v:
Nat. Commun. 13, 981 (2022)
The alkali halides are ionic compounds. Each alkali atom donates an electron to a halogen atom, leading to ions with full shells. The valence band is mainly located on halogen atoms, while, in a traditional picture, the conduction band is mainly loca
Externí odkaz:
http://arxiv.org/abs/2310.14070
Publikováno v:
ACS Nano, 17, 14, 13176 (2023)
We report on scanning tunneling microscopy (STM) topographs of individual metal phthalocyanines (MPc) on a thin salt (NaCl) film on a gold substrate, at tunneling energies within the molecule's electronic transport gap. Theoretical models of increasi
Externí odkaz:
http://arxiv.org/abs/2310.13962
Autor:
Cifuentes, Jesus D., Tanttu, Tuomo, Steinacker, Paul, Serrano, Santiago, Hansen, Ingvild, Slack-Smith, James P., Gilbert, Will, Huang, Jonathan Y., Vahapoglu, Ensar, Leon, Ross C. C., Stuyck, Nard Dumoulin, Itoh, Kohei, Abrosimov, Nikolay, Pohl, Hans-Joachim, Thewalt, Michael, Laucht, Arne, Yang, Chih Hwan, Escott, Christopher C., Hudson, Fay E., Lim, Wee Han, Rahman, Rajib, Dzurak, Andrew S., Saraiva, Andre
Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible
Externí odkaz:
http://arxiv.org/abs/2309.01849
Autor:
Cifuentes, Jesús D., Tanttu, Tuomo, Gilbert, Will, Huang, Jonathan Y., Vahapoglu, Ensar, Leon, Ross C. C., Serrano, Santiago, Otter, Dennis, Dunmore, Daniel, Mai, Philip Y., Schlattner, Frédéric, Feng, MengKe, Itoh, Kohei, Abrosimov, Nikolay, Pohl, Hans-Joachim, Thewalt, Michael, Laucht, Arne, Yang, Chih Hwan, Escott, Christopher C., Lim, Wee Han, Hudson, Fay E., Rahman, Rajib, Dzurak, Andrew S., Saraiva, Andre
Publikováno v:
Nat Commun 15, 4299 (2024)
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to
Externí odkaz:
http://arxiv.org/abs/2303.14864
Autor:
Tanttu, Tuomo, Lim, Wee Han, Huang, Jonathan Y., Stuyck, Nard Dumoulin, Gilbert, Will, Su, Rocky Y., Feng, MengKe, Cifuentes, Jesus D., Seedhouse, Amanda E., Seritan, Stefan K., Ostrove, Corey I., Rudinger, Kenneth M., Leon, Ross C. C., Huang, Wister, Escott, Christopher C., Itoh, Kohei M., Abrosimov, Nikolay V., Pohl, Hans-Joachim, Thewalt, Michael L. W., Hudson, Fay E., Blume-Kohout, Robin, Bartlett, Stephen D., Morello, Andrea, Laucht, Arne, Yang, Chih Hwan, Saraiva, Andre, Dzurak, Andrew S.
Publikováno v:
Nat. Phys. 6 (2024)
Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed t
Externí odkaz:
http://arxiv.org/abs/2303.04090