Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Leo Miglio"'
Autor:
Roy L. M. Op het Veld, Di Xu, Vanessa Schaller, Marcel A. Verheijen, Stan M. E. Peters, Jason Jung, Chuyao Tong, Qingzhen Wang, Michiel W. A. de Moor, Bart Hesselmann, Kiefer Vermeulen, Jouri D. S. Bommer, Joon Sue Lee, Andrey Sarikov, Mihir Pendharkar, Anna Marzegalli, Sebastian Koelling, Leo P. Kouwenhoven, Leo Miglio, Chris J. Palmstrøm, Hao Zhang, Erik P. A. M. Bakkers
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-1 (2021)
A Correction to this paper has been published: https://doi.org/10.1038/s42005-021-00578-4
Externí odkaz:
https://doaj.org/article/7e9c3978b28f41b2bf4171a41c9076fc
Autor:
Monica Bollani, Alexey Fedorov, Marco Albani, Sergio Bietti, Roberto Bergamaschini, Francesco Montalenti, Andrea Ballabio, Leo Miglio, Stefano Sanguinetti
Publikováno v:
Crystals, Vol 10, Iss 2, p 57 (2020)
We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalit
Externí odkaz:
https://doaj.org/article/58ed2e2e117b46c28e7dd86191ff7832
Autor:
Francesco Montalenti, Fabrizio Rovaris, Roberto Bergamaschini, Leo Miglio, Marco Salvalaglio, Giovanni Isella, Fabio Isa, Hans von Känel
Publikováno v:
Crystals, Vol 8, Iss 6, p 257 (2018)
Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science2012, 335, 1330–1334), immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largel
Externí odkaz:
https://doaj.org/article/48cc42d6059e4bc190cbf05cffc6fdf6
Autor:
Fabio Isa, Anna Marzegalli, Alfonso G. Taboada, Claudiu V. Falub, Giovanni Isella, Francesco Montalenti, Hans von Känel, Leo Miglio
Publikováno v:
APL Materials, Vol 1, Iss 5, Pp 052109-052109-8 (2013)
We show that the Ge concentration in Si1−xGex alloys grown under strong out-of-equilibrium conditions determines the character of the population of threading dislocations (TDs). Above a critical value x ∼ 0.25 vertical TDs dominate over the commo
Externí odkaz:
https://doaj.org/article/384917f1adfe41efbd94b7a11e5d1427
Autor:
Håkon Ikaros T. Hauge, Francesco Montalenti, Rianne C. Plantenga, Sebastian Kölling, Roberto Bergamaschini, Emilio Scalise, Leo Miglio, Yizhen Ren, M Albani, Marcel A. Verheijen, Erik P. A. M. Bakkers
Publikováno v:
Nanoscale, 13(20), 9436-9445. Royal Society of Chemistry
Formation of Ge-rich prismatic inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires is reported and discussed in relation to a growth model that explains their origin. An accurate TEM/EDX analysis shows that such prisms develop right on to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368227448eccfebedbbade66081d0e0a
https://doi.org/10.1039/d0nr08051a
https://doi.org/10.1039/d0nr08051a
Autor:
Francois D'heurle, Leo Miglio
Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermo
Autor:
Marco Salvalaglio, Francesco Montalenti, João Valente, Saleh Firoozabadi, Axel Voigt, M Albani, Roberto Bergamaschini, Giovanni Isella, Andreas Beyer, Leo Miglio, Kerstin Volz, Andrea Ballabio, Douglas J. Paul, Andrea Barzaghi
Publikováno v:
Crystal Growth & Design
We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d16e2750240c4eab973a72eca181fce
http://europepmc.org/articles/PMC8016367
http://europepmc.org/articles/PMC8016367
Autor:
Valdas Jokubavicius, Mikael Syväjärvi, Massimo Zimbone, Marco Mauceri, Rositsa Yakimova, Anna Marzegalli, Ioannis Deretzis, Leo Miglio, Giuseppe Fisicaro, Michael Schöler, Emilio Scalise, Manuel Kollmuss, Francesco La Via, Corrado Bongiorno, Ruggero Anzalone, Antonino La Magna, Peter J. Wellmann, Danilo Crippa, Filippo Giannazzo, Andrey Sarikov, Cristiano Calabretta, Viviana Scuderi, Marcin Zielinski, Philipp Schuh
Publikováno v:
Materials, Vol 14, Iss 5348, p 5348 (2021)
Materials
Materials
In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e2539de12916dd4de1f3366636f4cfd
https://www.mdpi.com/1996-1944/14/18/5348
https://www.mdpi.com/1996-1944/14/18/5348
Autor:
Mojmír Meduňa, Hans von Känel, Danilo Crippa, Fulvio Mancarella, Marco Mauceri, Marco Puglisi, Thomas Kreiliger, Leo Miglio, Francesco La Via
Publikováno v:
Journal of Crystal Growth. 507:70-76
We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0]. Using high resolution X-ray diffraction with reciprocal space mappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::927de67618ed4e113aa7d1c4ed4dee38
https://doi.org/10.1016/j.jcrysgro.2018.10.046
https://doi.org/10.1016/j.jcrysgro.2018.10.046
Autor:
Sebastian Koelling, Leo Miglio, Marcel A. Verheijen, Michiel W. A. de Moor, Stan M. E. Peters, Qingzhen Wang, Leo P. Kouwenhoven, Roy L. M. Op het Veld, Jouri D. S. Bommer, Chuyao Tong, Hao Zhang, Bart Hesselmann, Chris Palmstrom, Joon Sue Lee, Mihir Pendharkar, Di Xu, Kiefer Vermeulen, Jason Jung, Erik P. A. M. Bakkers, Anna Marzegalli, Andrey Sarikov, Vanessa Schaller
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-1 (2021)
The Data availability statement of this article has been modified to add the accession link to the raw data. The old Data availability statement read “Materials and data that support the findings of this research are available within the paper. All
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108b1084bee9286fac1a37a21993623c
https://doi.org/10.1038/s42005-021-00578-4
https://doi.org/10.1038/s42005-021-00578-4