Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Leo G. Henry"'
Publikováno v:
2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
Existing Charged Device Model standards have relied exclusively on time domain specifications; but devices discharge in the CDM resonant circuit at different frequencies. Accurate measurements of CDM discharge parameters require that its primary meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79eefe2f4bbdb679f06323e71d16389c
https://doi.org/10.1109/eosesd.2016.7592540
https://doi.org/10.1109/eosesd.2016.7592540
Autor:
Leo G. Henry
Publikováno v:
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c41059401cb7a5d8a5b1f04fb57f9141
https://doi.org/10.1109/eosesd.2015.7314757
https://doi.org/10.1109/eosesd.2015.7314757
Publikováno v:
Journal of Electrostatics. 62:195-209
Recent “real” human body model and machine model discharge waveform measurements provide completely new data on the risetime and peak current threats to devices. Additional investigations were performed to determine the impact of humidity and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ad0f984470546a69ab1f06425e33bc
https://doi.org/10.1016/j.elstat.2004.04.001
https://doi.org/10.1016/j.elstat.2004.04.001
Publikováno v:
Microelectronics Reliability. 42:919-927
The inconsistent readings of various charged device model (CDM) test heads indicates severe metrology problems exist. Test head-to-test head response times vary by factors of two to three and no independent calibration method exists. CDM waveforms de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c859555b02f5b5a315dccfdcca5894d0
https://doi.org/10.1016/s0026-2714(02)00055-0
https://doi.org/10.1016/s0026-2714(02)00055-0
Publikováno v:
Microelectronics Reliability. 41:1789-1800
Parameters associated with an observed variation in charged device model (CDM) ESD waveforms are shown to be pogo pin diameter, pogo pin length, distance between ground plane and charge plate, verification module disk diameter, dielectric area, and g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::140af4b3b96ec4e187f6cffd62e46b44
https://doi.org/10.1016/s0026-2714(01)00035-x
https://doi.org/10.1016/s0026-2714(01)00035-x
Publikováno v:
IEEE Transactions on Electronics Packaging Manufacturing. 24:99-108
This paper describes a constant impedance transmission line pulse system with new measurement capabilities and improved accuracy. The paper enforces a broader look at transmission line pulse (TLP) data, beyond the I-V curves. Accurate TLP measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bb7001694d491b7b43c8c2ef9408593
https://doi.org/10.1109/6104.930960
https://doi.org/10.1109/6104.930960
Publikováno v:
Microelectronics Reliability. 41:407-415
In this work, we demonstrate that both capacitance and inductance must be the central parameters associated with the charged device model (CDM) waveform verification modules. We also propose a change from the previously used FR-4 dielectric material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f93b020429bbe97a2a5ea08865a34b
https://doi.org/10.1016/s0026-2714(00)00237-7
https://doi.org/10.1016/s0026-2714(00)00237-7
Autor:
M. Kelly, Horst Gieser, Koen Verhaege, Leo G. Henry, T. Meuse, L. Avery, T. Brodbeck, Karlheinz Bock, M. Chaine, Jon Barth
Publikováno v:
Scopus-Elsevier
The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72c1a5e3ff4602cb13ee1c0086964a32
https://doi.org/10.1016/s0026-2714(99)00081-5
https://doi.org/10.1016/s0026-2714(99)00081-5
Autor:
Leo G. Henry
Publikováno v:
International Symposium for Testing and Failure Analysis.
For certain programmable logic type devices, the electrical, morphological and failure location differences in the ESD signatures between ICC failures and I/O leakage failures have been identified. Based on these electrical, morphological and physica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b6865c031a4b38ae2904459462eeef
https://doi.org/10.31399/asm.cp.istfa2004p0680
https://doi.org/10.31399/asm.cp.istfa2004p0680