Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Leo Asinovsky"'
Publikováno v:
Thin Solid Films. :248-253
Polycrystalline silicon (polySi) doping is an important process in VLSI manufacturing that allows one to lower the resistivity of the polySi. Diffusion doping with a gas-phase source yields the uniform and heavily doped polySi normally required for g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4218049f00b5702ed3b49aa06d4b794c
https://doi.org/10.1016/s0040-6090(97)00827-4
https://doi.org/10.1016/s0040-6090(97)00827-4
Publikováno v:
Thin Solid Films. :298-302
An empirical dielectric function (EDF) has been used to represent the spectra in the effective optical constants of Si-rich nitride (SiNx) thin films processed by PECVD. A good correlation was found between the EDF parameters and the film composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eff756c68f6c32b273e9d61cfd225ca
https://doi.org/10.1016/s0040-6090(97)00836-5
https://doi.org/10.1016/s0040-6090(97)00836-5
Autor:
Larry E. Frisa, Leo Asinovsky
Publikováno v:
Thin Solid Films. :303-307
The thickness and uniformity of TiNx layers, which are widely used as diffusion barriers, is routinely determined using sheet resistance measurements. However, resistivity is sensitive to stoichiometry as well as to film thickness. In this paper it i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468104cf2d6ffa93d9f1ae9f5d1d14ce
https://doi.org/10.1016/s0040-6090(97)00837-7
https://doi.org/10.1016/s0040-6090(97)00837-7
Publikováno v:
Thin Solid Films. :198-204
The optical properties of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (a-SiN x ) films are strongly dependent on the deposition parameters. One of the important applications of a-SiN x is its use as an anti-reflection coating for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3757a53cf4b5cd26f606d6418cb3efe
https://doi.org/10.1016/s0040-6090(97)00817-1
https://doi.org/10.1016/s0040-6090(97)00817-1
Autor:
Leo Asinovsky, Larry E. Frisa
Publikováno v:
Microelectronic Engineering. :427-432
TiN is widely used as a diffusion barrier layer. Uniformity of the thickness and composition of this layer is dependent on the deposition conditions and is important for production yield. This uniformity is routinely derived from the sheet resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43468da8b9663bbf00f80e4bb5470f45
https://doi.org/10.1016/s0167-9317(97)00142-1
https://doi.org/10.1016/s0167-9317(97)00142-1
Publikováno v:
MRS Proceedings. 452
Polycrystalline silicon (polySi) is widely used in the semiconductor industry as a gate electrode, interconnect material and for various other applications. Small variations in deposition conditions can significantly affect this material's properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d7c6a9e3112de23e2f2ff013a430d0
https://doi.org/10.1557/proc-452-1013
https://doi.org/10.1557/proc-452-1013
Publikováno v:
Scopus-Elsevier
Silicon rich nitride (SiRN) film prepared by plasma enhanced chemical vapor deposition (PECVD) for use as the phase-shifting mask for Deep-ultraviolet (UV) lithography has been developed. Optical properties and compositional characterizations of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b3aa142ed51b937b64d8995354f1731
https://doi.org/10.1143/jjap.37.571
https://doi.org/10.1143/jjap.37.571
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