Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Lennart Lindström"'
Autor:
Charalamos A. Londos, Vladimir P. Markevich, J. Lennart Lindström, Bengt Gunnar Svensson, L.I. Murin
Publikováno v:
Solid State Phenomena. :129-134
Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlat
Autor:
L.I. Murin, J. Lennart Lindström, Bengt Gunnar Svensson, Anthony R. Peaker, Vladimir P. Markevich, Charalamos A. Londos
Publikováno v:
Solid State Phenomena. :267-272
Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature range 300-700°C in carbon-lean Cz-Si samples irradiated with MeV electrons or neutrons. New experimental data c
Autor:
J. Lennart Lindström, V. V. Litvinov, Bengt Gunnar Svensson, L.I. Murin, Vladimir P. Markevich
Publikováno v:
Solid State Phenomena. :735-740
Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrom
Autor:
R. Jones, Patrick R. Briddon, Anthony R. Peaker, I. F. Medvedeva, Vitor J.B. Torres, Vladimir P. Markevich, João A. P. Coutinho, L.I. Murin, S. B. Lastovskii, Sven Öberg, J. Lennart Lindström
Publikováno v:
Solid State Phenomena. :273-278
The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studie
Autor:
M. G. Sosnin, J. Lennart Lindström, N.A. Tripachko, Yu.V. Pomozov, A.V. Duvanskii, Leonid Makarenko, L.I. Murin, Anthony R. Peaker, Lyudmila I. Khirunenko, S. B. Lastovskii, Vladimir P. Markevich
Publikováno v:
Solid State Phenomena. :261-266
The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTI
Publikováno v:
Solid State Phenomena. :105-110
Autor:
Mats Kleverman, J. Lennart Lindström, L.I. Murin, J. Hermansson, Bengt Gunnar Svensson, T. Hallberg, Vladimir P. Markevich
Publikováno v:
Solid State Phenomena. :57-62
Carbon-oxygen-related complexes in Si crystals enriched with either oxygen (O-16,O-18) or carbon (C-12, C-13) isotopes were investigated by Fourier Transform infrared absorption spectroscopy. The samples were irradiated with electrons at room tempera
Publikováno v:
Semiconductors. 35:864-869
Absorption in the infrared region of the spectrum was studied for both the as-grown Ge crystals and the Ge crystals irradiated with fast electrons (with subsequent heat treatment); the crystals were preliminarily enriched with 16O or 18O isotopes. Th
Publikováno v:
Scopus-Elsevier
Autor:
L.I. Murin, J. Lennart Lindström, Torgny Hallberg, J. Hermansson, Bengt Gunnar Svensson, Mats Kleverman, Vladimir P. Markevich
Publikováno v:
Solid State Phenomena. :297-302