Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lennart Kruse"'
Publikováno v:
IEEE Transactions on Power Electronics. 33:1143-1153
In this paper, a new low-loss turn- on concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::367c04b23bf2b6ef7cecd285f467ade1
https://doi.org/10.1109/tpel.2017.2688474
https://doi.org/10.1109/tpel.2017.2688474
Autor:
Diane-Perle Sadik, Hans-Peter Nee, Thomas Wiik, Erik Velander, Lennart Kruse, Andreas Lofgren, Stephan Meier
Publikováno v:
2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia).
The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e91d78d2fb7b11873d19a87fbe414cb0
https://doi.org/10.1109/ipemc.2016.7512839
https://doi.org/10.1109/ipemc.2016.7512839
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
The switching loss of the 1700 V SiC Planar-Gate MOSFET is significant at switching frequencies above 2 kHz. If a simple resistive gate driver is adjusted for the worst case operating point (temperature, commutated voltage and current) with a given a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49573afa4eb6975b3fe7d62740d64ae1
https://doi.org/10.1109/epe.2015.7309140
https://doi.org/10.1109/epe.2015.7309140