Výsledky vyhledávání - "Lennart Bours"

Akademický článek

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Autor: Lennart Bours, Maria Teresa Mercaldo, Mario Cuoco, Elia Strambini, Francesco Giazotto

Publikováno v: Physical Review Research, Vol 2, Iss 3, p 033353 (2020)

We demonstrate that superconducting aluminium nanobridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in- and out-of-plane magnetic field responses in the presence of electr

Externí odkaz: https://doaj.org/article/beb877425c984327ac24d726e654677d

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Electrostatic Field-Driven Supercurrent Suppression in Ionic-Gated Metallic Superconducting Nanotransistors

Autor: Lennart Bours, Claudio Puglia, Francesco Giazotto, Francesco Crisá, Stefano Roddaro, Elia Strambini, Federico Paolucci, Giorgio De Simoni

Publikováno v: Nano letters
21 (2022): 10309–10314. doi:10.1021/acs.nanolett.1c03481
info:cnr-pdr/source/autori:Federico Paolucci, Francesco Crisá, Giorgio De Simoni, Lennart Bours, Claudio Puglia, Elia Strambini, Stefano Roddaro, and Francesco Giazotto/titolo:Electrostatic Field-Driven Supercurrent Suppression in Ionic-Gated Metallic Superconducting Nanotransistors/doi:10.1021%2Facs.nanolett.1c03481/rivista:Nano letters (Print)/anno:2022/pagina_da:10309/pagina_a:10314/intervallo_pagine:10309–10314/volume:21
21 (2021): 10309–10314. doi:10.1021/acs.nanolett.1c03481
info:cnr-pdr/source/autori:Paolucci F.; Crisa F.; De Simoni G.; Bours L.; Puglia C.; Strambini E.; Roddaro S.; Giazotto F./titolo:Electrostatic Field-Driven Supercurrent Suppression in Ionic-Gated Metallic Superconducting Nanotransistors/doi:10.1021%2Facs.nanolett.1c03481/rivista:Nano letters (Print)/anno:2021/pagina_da:10309/pagina_a:10314/intervallo_pagine:10309–10314/volume:21
Nano Letters

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and supercond

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4100c4fcc887f70471db7ae1ca0050a4
http://www.cnr.it/prodotto/i/467921

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Unveiling Mechanisms of Electric Field Effects on Superconductors by Magnetic Field Response

Autor: Elia Strambini, Francesco Giazotto, Lennart Bours, Maria Teresa Mercaldo, Mario Cuoco

Publikováno v: Physical Review Research

We demonstrate that superconducting aluminium nano-bridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in- and out-of-plane magnetic field responses in the presence of elect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5eb1cffe99a7789b82edd02216b98233

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Vectorial Control of the Spin-Orbit Interaction in Suspended InAs Nanowires

Autor: Mirko Rocci, Lucia Sorba, Matteo Carrega, Valentina Zannier, Francesco Giazotto, Andrea Iorio, Elia Strambini, Stefano Roddaro, Lennart Bours

Publikováno v: Nano letters
19 (2019): 652–657. doi:10.1021/acs.nanolett.8b02828
info:cnr-pdr/source/autori:Iorio A.; Rocci M.; Bours L.; Carrega M.; Zannier V.; Sorba L.; Roddaro S.; Giazotto F.; Strambini E./titolo:Vectorial Control of the Spin-Orbit Interaction in Suspended InAs Nanowires/doi:10.1021%2Facs.nanolett.8b02828/rivista:Nano letters (Print)/anno:2019/pagina_da:652/pagina_a:657/intervallo_pagine:652–657/volume:19

Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1ed19bde4f346a096a672eacf02312e
https://arxiv.org/pdf/1807.04344.pdf

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Phase-tunable thermal rectification in the topological SQUIPT

Autor: Matteo Carrega, Ewelina M. Hankiewicz, Lennart Bours, Alessandro Braggio, Francesco Giazotto, Laurens W. Molenkamp, Elia Strambini, Björn Sothmann

Publikováno v: Physical Review Applied 11 (2019): 044073. doi:10.1103/PhysRevApplied.11.044073
info:cnr-pdr/source/autori:Bours L.; Sothmann B.; Carrega M.; Strambini E.; Braggio A.; Hankiewicz E.M.; Molenkamp L.W.; Giazotto F./titolo:Phase-Tunable Thermal Rectification in the Topological SQUIPT/doi:10.1103%2FPhysRevApplied.11.044073/rivista:Physical Review Applied/anno:2019/pagina_da:044073/pagina_a:/intervallo_pagine:044073/volume:11

We theoretically explore the behavior of thermal transport in the topological SQUIPT, in the linear and nonlinear regime. The device consists of a topological Josephson junction based on a two-dimensional topological insulator in contact with two sup

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec64ac9a51e72b041b859a4c0305958d

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Manipulating quantum Hall edge channels in graphene through scanning gate microscopy

Autor: Alina Mreńca-Kolasińska, Bartłomiej Szafran, Stefan Heun, Stefano Guiducci, Jan C. Maan, Lennart Bours

Publikováno v: Physical Review B, 96, 1-10
Physical Review B 96 (2017). doi:10.1103/PhysRevB.96.195423
info:cnr-pdr/source/autori:Bours L.; Guiducci S.; Mrenca-Kolasinska A.; Szafran B.; Maan J.C.; Heun S./titolo:Manipulating quantum Hall edge channels in graphene through scanning gate microscopy/doi:10.1103%2FPhysRevB.96.195423/rivista:Physical Review B/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:96
Physical Review B, 96, 19, pp. 1-10

We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show full control

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4a4cd49b734f67fd040b08d417ef626
https://doi.org/10.1103/PhysRevB.96.195423

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Investigation of InAs–based devices for topological applications

Autor: Mirko Rocci, Fabio Beltram, Lennart Bours, Lucia Sorba, Elia Strambini, Giorgio Biasiol, Matteo Carrega, Stefano Roddaro, Valentina Zannier, Francesco Giazotto, Stefan Heun, Stefano Guiducci, Andrea Iorio

Publikováno v: Spintronics XII
Web of Science
Proceedings of SPIE, the International Society for Optical Engineering 11090 (2019). doi:10.1117/12.2527754
info:cnr-pdr/source/autori:Carrega M.; Guiducci S.; Iorio A.; Bours L.; Strambini E.; Biasiol G.; Rocci M.; Zannier V.; Sorba L.; Beltram F.; Roddaro S.; Giazotto F.; Heun S./titolo:Investigation of InAs-based devices for topological applications/doi:10.1117%2F12.2527754/rivista:Proceedings of SPIE, the International Society for Optical Engineering/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:11090

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, lar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::121f4ba4bf9135fba45a0258ed6c7860

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