Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Autor: Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo

Publikováno v: Nanomaterials, Vol 13, Iss 21, p 2837 (2023)

In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical char

Externí odkaz: https://doaj.org/article/599297df99194f91b0d35d267721607d

Nanofriction Properties of Mono- and Double-Layer Ti3C2Tx MXenes

Autor: Andrii Kozak, Monika Hofbauerová, Yuriy Halahovets, Lenka Pribusová-Slušná, Marián Precner, Matej Mičušík, L’ubomír Orovčík, Martin Hulman, Anastasiia Stepura, Mária Omastová, Peter Šiffalovič, Milan Ťapajna

Publikováno v: ACS Applied Materials & Interfaces. 14:36815-36824

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d302fdbd26f2290243da707e58ec9a9c
https://doi.org/10.1021/acsami.2c08963

Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio

Autor: Federica Bondino, Lenka Pribusová Slušná, Jana Hrdá, Martin Hulman, Tatiana Vojteková, M. Sojková, Edmund Dobročka, Igor Píš, Valéria Tašková

Publikováno v: RSC Advances. 11:27292-27297

Recently, few-layer PtSe2 films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::097ee43b8b3dc372747d09d5c88bf1bc
https://doi.org/10.1039/d1ra04507e

Tuning the charge carrier mobility in few-layer PtSe

Autor: Jana, Hrdá, Valéria, Tašková, Tatiana, Vojteková, Lenka Pribusová, Slušná, Edmund, Dobročka, Igor, Píš, Federica, Bondino, Martin, Hulman, Michaela, Sojková

Publikováno v: RSC advances. 11(44)

Recently, few-layer PtSe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::297e268ec705e91195e2a2aa9092a4f9
https://pubmed.ncbi.nlm.nih.gov/35492504

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Autor: Federica Bondino, Martin Hulman, Peter Hutár, Edmund Dobročka, Roman Stoklas, Lenka Pribusová Slušná, M. Sojková, Frans Munnik, Igor Píš, Valéria Tašková

Publikováno v: Applied Surface Science
Applied Surface Science 538(2021), 147936
Applied surface science 538 (2021). doi:10.1016/j.apsusc.2020.147936
info:cnr-pdr/source/autori:Sojkova, Michaela; Dobrocka, Edmund; Hutar, Peter; Taskova, Valeria; Slusna, Lenka Pribusova; Stoklas, Roman; Pis, Igor; Bondino, Federica; Munnik, Frans; Hulman, Martin/titolo:High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization/doi:10.1016%2Fj.apsusc.2020.147936/rivista:Applied surface science/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:538

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cddbe9c9d55c61ccbafbe5afef7a3393