Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Leng-Seow Tan"'
Publikováno v:
IEEE Transactions on Electron Devices. 58:95-102
We report the demonstration of novel techniques for surface passivation of gallium nitride (GaN), comprising the steps of in situ vacuum anneal (VA) and silane-ammonia (SiH4 + NH3) or silane (SiH4) treatment for GaN, prior to the formation of high-pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3fc687fe65be09b08343ee8b844170
https://doi.org/10.1109/ted.2010.2084410
https://doi.org/10.1109/ted.2010.2084410
Autor:
Leng Seow Tan, Minghui Hong
Publikováno v:
Applied Physics A. 93:907-910
A simple and flexible technique aimed to generate large-area periodic nano-dot array features on metal thin films by laser interference lithography (LIL) has been demonstrated. In this paper, gold nano-dot arrays with a period of ∼450 nm and a dot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639fc7bc8ab322dd3513bf8011888af7
https://doi.org/10.1007/s00339-008-4749-y
https://doi.org/10.1007/s00339-008-4749-y
Autor:
Minghui Hong, Leng Seow Tan
Publikováno v:
International Journal of Optomechatronics. 2:382-389
The laser nano-patterning technique described here makes use of laser irradiation through a transparent microlens array to generate nano-patterns over a large area in a short time. A femtosecond laser and an excimer laser were used to pattern phase c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd569be40b339b42941b2bf183d4c71f
https://doi.org/10.1080/15599610802438425
https://doi.org/10.1080/15599610802438425
Publikováno v:
Applied Physics A. 93:685-689
Patterned gallium nitride nanowires and nanodots have been grown on n-Si (100) substrates by pulsed laser deposition. The nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa8eabf5189a52a3c2cf9f611cfeea31
https://doi.org/10.1007/s00339-008-4697-6
https://doi.org/10.1007/s00339-008-4697-6
Publikováno v:
The Review of Laser Engineering. 36:1184-1187
Research progress on laser nano-fabrication with the combination of AFM, NSOM and transparent particles mask is reviewed. With the combination of other advanced processing tools, laser irradiation can push the processing feature size down to ~ 20 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb1b4d28a2e5c13f96b23f03f87e6b3
https://doi.org/10.2184/lsj.36.1184
https://doi.org/10.2184/lsj.36.1184
Publikováno v:
Journal of Alloys and Compounds. 449:253-257
Nanometer-sized features were fabricated on Ge1Sb2Te4 phase change films uniformly by irradiation with the fundamental and second harmonic components of a Nd:YAG laser through a microlens array. The effect of laser fluence and laser wavelength on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff268293aed99b7de249919c4ab3811
https://doi.org/10.1016/j.jallcom.2006.02.111
https://doi.org/10.1016/j.jallcom.2006.02.111
Publikováno v:
physica status solidi c. 4:2330-2333
The energy band alignment of the Sc2O3/GaN heterointerface has been studied by means of X-ray photoelectron spectroscopy. The single-crystalline Sc2O3 was grown epitaxially on GaN template using pulsed laser deposition. A valence band offset of 0.84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb3f1ec326e5f41e8102821568b2960
https://doi.org/10.1002/pssc.200674702
https://doi.org/10.1002/pssc.200674702
Publikováno v:
Semiconductor Science and Technology. 22:522-527
AlGaN/GaN high electron mobility transistors (HEMTs) using HfO2 as a surface passivation layer and metal–oxide–semiconductor HEMTs (MOS-HEMTs) using HfO2 as gate oxide have been investigated and compared with the regular HEMTs. In MOS-HEMTs, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::771d37f7b82c2c0b005f202703410d7d
https://doi.org/10.1088/0268-1242/22/5/011
https://doi.org/10.1088/0268-1242/22/5/011
Publikováno v:
Thin Solid Films. 515:4369-4372
Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the produc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f24433102cbfaf9ac12e787a93eefb1
https://doi.org/10.1016/j.tsf.2006.07.103
https://doi.org/10.1016/j.tsf.2006.07.103
Publikováno v:
Thin Solid Films. 515:4476-4479
Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 °C in flowing N2 ambient for 120 s wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1d95285ecb474bb093a566c2af8dfa
https://doi.org/10.1016/j.tsf.2006.07.133
https://doi.org/10.1016/j.tsf.2006.07.133