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pro vyhledávání: '"Lenahan, Patrick M."'
Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO$_2$ MOS
Externí odkaz:
http://arxiv.org/abs/2312.14933
Autor:
Moxim, Stephen J., Harmon, Nicholas J., Myers, Kenneth J., Ashton, James P., Frantz, Elias B., Flatté, Michael E., Lenahan, Patrick M., Ryan, Jason T.
Publikováno v:
Journal of Applied Physics; 4/21/2024, Vol. 135 Issue 15, p1-10, 10p
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, howev
Externí odkaz:
http://arxiv.org/abs/2008.08121
Autor:
Frantz, Elias B., McMillan, Nicholas J. Harmon Stephen R., Moxim, Stephen J., Flatte, Michael E., Lenahan, Patrick M.
Publikováno v:
J. Appl. Phys. 128, 124504 (2020)
We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance spectra. The method utilizes a least squares fitting of mode
Externí odkaz:
http://arxiv.org/abs/2006.15064
Publikováno v:
Journal of Applied Physics; 9/21/2022, Vol. 132 Issue 11, p1-9, 9p
Autor:
Frantz, Elias B., Harmon, Nicholas J., Michalak, David J., Henry, Eric M., Flatté, Michael E., King, Sean W., Clarke, James S., Lenahan, Patrick M.
Publikováno v:
Journal of Applied Physics; 12/21/2021, Vol. 130 Issue 23, p1-10, 10p
Publikováno v:
Journal of Applied Physics; 10/7/2021, Vol. 130 Issue 13, p1-10, 10p
Autor:
Frantz, Elias B., Michalak, David J., Harmon, Nicholas J., Henry, Eric M., Moxim, Stephen J., Flatté, Michael E., King, Sean W., Clarke, James S., Lenahan, Patrick M.
Publikováno v:
Journal of Applied Physics; 8/14/2021, Vol. 130 Issue 6, p1-7, 7p
Autor:
Mutch, Michael J., Pomorski, Thomas, Bittel, Brad C., Cochrane, Corey J., Lenahan, Patrick M., Liu, Xin, Nemanich, Robert J., Brockman, Justin, French, Marc, Kuhn, Markus, French, Benjamin, King, Sean W.
Publikováno v:
In Microelectronics Reliability August 2016 63:201-213
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