Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Lena Zavyalova"'
Publikováno v:
Design-Process-Technology Co-optimization XV.
As feature resolution and process variations continue to shrink for new nodes of both DUV and EUV lithography, the density and number of devices on advanced semiconductor masks continue to increase rapidly. These advances cause significantly increase
Autor:
Moongyu Jeong, Marco Guajardo, Tim Fuehner, Li-Jin Chen, Lena Zavyalova, Cheng-En (Rich) Wu, Song-haeng Lee, Hua Song, Kevin Lucas
Publikováno v:
Design-Process-Technology Co-optimization XV.
We provide background on differences between traditional and machine learning modeling. We then discuss how these differences impact the different validation needs of traditional and machine learning OPC compact models. We then provide multiple diver
Publikováno v:
SPIE Proceedings.
With constant shrinking of device critical dimensions (CD), the quality of pattern transfer in IC fabrication depends on the etch process and the exposure process fidelities, and the interaction of lithographic and etching processes is no longer negl
Autor:
Thomas Schmoeller, Bernd Kuechler, Lena Zavyalova, Yongfa Fan, Wolfgang Hoppe, Puvan Perampalam, Qing Yang, Kar Kit Koh, Makoto Miyagi
Publikováno v:
SPIE Proceedings.
While critical lithographic feature size diminishes, resist profile can vary significantly as image varies. As a consequence, the final etch results are becoming more dependent on 3D resist profile rather than only a simple 2D resist image as an etch
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) lithography is one of the leading technologies for 16nm and smaller node device patterning. One patterning issue intrinsic to EUV lithography is the shadowing effect due to oblique illumination at the mask and mask absorber
Autor:
Lena Zavyalova, Sung-Woo Lee, Yongfa Fan, Kyoil Koo, Sooryong Lee, Thomas Schmoeller, Chun-Suk Suh, Jason Huang, Irene Su, Moon-Gyu Jeongb, Junghoon Ser, Brad Falch
Publikováno v:
SPIE Proceedings.
As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm water immersion lithography, the demand for more accurate OPC modeling is unprecedented to accommodate the diminishing process margin. Among all the challenges, modelin
Autor:
Irene Su, Eric Hendrickx, Jacob Sorensen, Lena Zavyalova, Gian Lorusso, Stephen Jang, Weimin Gao, Brian Ward, Kevin Lucas, Hua Song, Jonathan Cobb
Publikováno v:
SPIE Proceedings.
EUV lithography is widely viewed as a main contending technology for 16nm node device patterning. However, EUV has several complex patterning issues which will need accurate compensation in mask synthesis development and production steps. The main is
Publikováno v:
Alternative Lithographic Technologies.
Now that full-field alpha EUV scanners are available to lithographers at multiple sites around the world, there is greatly increased demand for full-field EUV circuit and teststructure wafer images. Successful patterning of these circuit and teststru
Autor:
Yunqiang Zhang, Lena Zavyalova, Ebo Croffie, Brian Ward, Kevin Lucas, Brad Falch, Charlie Zhang, Yongfa Fan, Jianliang Li, Lawrence S. Melvin
Publikováno v:
SPIE Proceedings.
A precise lithographic model has always been a critical component for the technique of Optical Proximity Correction (OPC) since it was introduced a decade ago [1] . As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm waf
Publikováno v:
SPIE Proceedings.
A thin membrane called a pellicle is commonly used to protect the mask from contamination. The thickness of the pellicle material is usually optimized at normal incident angle to minimize the thin film optics interference effect by cancellation of th