Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Len Mei"'
This book explores the digital technologies essential for building the new digital economy. It delves into concepts such as cloud and edge computing, 5G telecommunication, blockchain, big data, and AI, explaining how these technologies enable the dig
This book provides a comprehensive introduction to blockchain technology, discussing its fundamentals, development issues, potential applications, security, and use in cryptocurrency. It also delves into fintech, its current status, and related conce
Autor:
Len Mei
This book discusses fundamentals of blockchain technology, the issues in its development, potential applications, and its use in cryptocurrency. It also covers fintech, its status and applications, and the concepts related to a digital economy. Becau
Autor:
Len Mei
This book examines the underlying digital technologies required to build the new digital economy. It discusses basic concepts and elements of the technologies that make a digital economy possible, such as cloud and edge computing, 5G telecommunicatio
Autor:
Dino Chen, Len Mei, Tings Wang, Nan-Cyi Wu, J.s. Wang, Joe Hsieh, H.k. Hsu, Hui Lu, Thomas Fong
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Indium and nitrogen implant were used to form the NMOSFET retrograde channel and low-threshold thin-oxide devices respectively. These two impurities are implanted into the same MOSFET channel before gate oxidation for an advanced low cost DRAM techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d393c0f05ed9c905cc10f6c391e4a3b
https://doi.org/10.1109/relphy.2006.251336
https://doi.org/10.1109/relphy.2006.251336
Publikováno v:
Japanese Journal of Applied Physics. 49:074105
The impacts of different source junctions on the program/erase speed and cycling degradation are studied in details for split-gate memory using source-junction-side FN erase and source-side injection program. The device with pure phosphorous source j
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a95fc623786c3be7afd0ecc6a787e114
https://doi.org/10.1143/jjap.49.074105
https://doi.org/10.1143/jjap.49.074105
Publikováno v:
1980 International Electron Devices Meeting; 1980, p219-222, 4p
Publikováno v:
Journal of The Electrochemical Society. 129:1791-1795
The electrical characteristics of polycrystalline silicon layers are closely related to their grain structure. This paper describes a comprehensive study of the grain growth of polysilicon under a wide range of doping and processing conditions. A gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11ac12e700d428e75cfa8e19535aef5d
https://doi.org/10.1149/1.2124295
https://doi.org/10.1149/1.2124295
Publikováno v:
1980 International Electron Devices Meeting.
The use of plasma etching through multilayer structures is now a common practice in the IC industry. The control of etched profiles is very critical to achieve finely-patterned device structures. Most of the work in the effort of achieving a better p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a4267f4c7af4ce5d1a694118c612de
https://doi.org/10.1109/iedm.1980.189968
https://doi.org/10.1109/iedm.1980.189968
Publikováno v:
1980 International Electron Devices Meeting.
A process model capability has been developed to simulate the electrical and metallurgical parameters of multilayer structures involving polycrystalline Silicon, such as poly gate and buried contacts. Experimental and simulated results are shown for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4eab440af474798b5f8ffe4bd12e62
https://doi.org/10.1109/iedm.1980.189798
https://doi.org/10.1109/iedm.1980.189798