Zobrazeno 1 - 10
of 3 861
pro vyhledávání: '"Lemme A."'
Graphene is being increasingly used as an interesting transducer membrane in micro- and nanoelectromechanical systems (MEMS and NEMS, respectively) due to its atomical thickness, extremely high carrier mobility, high mechanical strength and piezoresi
Externí odkaz:
http://arxiv.org/abs/2410.01439
Autor:
Lukas, Sebastian, Rademacher, Nico, Cruces, Sofía, Gross, Michael, Desgué, Eva, Heiserer, Stefan, Dominik, Nikolas, Prechtl, Maximilian, Hartwig, Oliver, Coileáin, Cormac Ó, Stimpel-Lindner, Tanja, Legagneux, Pierre, Rantala, Arto, Saari, Juha-Matti, Soikkeli, Miika, Duesberg, Georg S., Lemme, Max C.
Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The
Externí odkaz:
http://arxiv.org/abs/2409.03053
Autor:
Lukas, Sebastian, Esteki, Ardeshir, Rademacher, Nico, Jangra, Vikas, Gross, Michael, Wang, Zhenxing, Ngo, Ha Duong, Bäuscher, Manuel, Mackowiak, Piotr, Höppner, Katrin, Wehenkel, Dominique, van Rijn, Richard, Lemme, Max C.
Suspended membranes of monoatomic graphene exhibit great potential for applications in electronic and nanoelectromechanical devices. In this work, a "hot and dry" transfer process is demonstrated to address the fabrication and patterning challenges o
Externí odkaz:
http://arxiv.org/abs/2408.16408
Autor:
Singh, Radhakant, Raghuwanshi, Mohit, Sundarapandian, Balasubramanian, Thomas, Rijil, Kirste, Lutz, Suckow, Stephan, Lemme, Max
We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $\mu$m buried silicon oxide layer using reactive DC magnetron sputtering at a
Externí odkaz:
http://arxiv.org/abs/2408.09864
Autor:
Cruces, Sofia, Ganeriwala, Mohit D., Lee, Jimin, Völkel, Lukas, Braun, Dennis, Grundmann, Annika, Ran, Ke, Marín, Enrique G., Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Mayer, Joachim, Godoy, Andrés, Daus, Alwin, Lemme, Max C.
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selector
Externí odkaz:
http://arxiv.org/abs/2408.09780
Autor:
Esteki, Ardeshir, Riazimehr, Sarah, Piacentini, Agata, Knoops, Harm, Macco, Bart, Otto, Martin, Rinke, Gordon, Wang, Zhenxing, Ran, Ke, Mayer, Joachim, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Neumaier, Daniel, Daus, Alwin, Lemme, Max C.
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and
Externí odkaz:
http://arxiv.org/abs/2408.07183
Autor:
Icking, E., Emmerich, D., Watanabe, K., Taniguchi, T., Beschoten, B., Lemme, M. C., Knoch, J., Stampfer, C.
Publikováno v:
Nano Letters 24, 11454 (2024)
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power cons
Externí odkaz:
http://arxiv.org/abs/2408.01111
Autor:
Estévez, Jorge Eduardo Adatti, Schätz, Josef, Ruhkopf, Jasper, Weber, Annika, Tumpold, David, Zöpfl, Alexander, Krumbein, Ulrich, Lemme, Max Christian
Graphene flake-based dispersions are attractive materials for various applications in microelectronics because of their ease of fabrication and the potential to deposit them on diverse substrates. The integration of these materials into conductive ne
Externí odkaz:
http://arxiv.org/abs/2407.19701
Autor:
Reato, Eros, Esteki, Ardeshir, Ku, Benny, Wang, Zhenxing, Heuken, Michael, Lemme, Max C., Engström, Olof
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric condition
Externí odkaz:
http://arxiv.org/abs/2407.07783
Autor:
Şeker, Enes, Thomas, Rijil, von Hünefeld, Guillermo, Suckow, Stephan, Kaveh, Mahdi, Ronniger, Gregor, Safari, Pooyan, Sackey, Isaac, Stahl, David, Schubert, Colja, Fischer, Johannes Karl, Freund, Ronald, Lemme, Max C.
The fields of machine learning and artificial intelligence drive researchers to explore energy-efficient, brain-inspired new hardware. Reservoir computing encompasses recurrent neural networks for sequential data processing and matches the performanc
Externí odkaz:
http://arxiv.org/abs/2406.13549