Zobrazeno 1 - 10
of 347
pro vyhledávání: '"Lemaur, Vincent"'
Autor:
Mondelli, Pierluigi, Kaienburg, Pascal, Silvestri, Francesco, Scatena, Rebecca, Welton, Claire, Grandjean, Martine, Lemaur, Vincent, Solano, Eduardo, Nyman, Mathias, Horton, Peter, Coles, Simon, Barrena, Esther, Riede, Moritz, Radaelli, Paolo, Beljonne, David, Reddy, Manjunatha, Morse, Graham
The active layer crystallinity has long been associated with favourable organic solar cells (OSCs) properties such as high mobility and Fill Factor. In particular, this applies to acceptor materials such as fullerene-derivatives and the most recent N
Externí odkaz:
http://arxiv.org/abs/2301.00214
Autor:
Niebel, Claude, Kim, Yeongin, Ruzié, Christian, Karpinska, Jolanta, Chattopadhyay, Basab, Schweicher, Guillaume, Richard, Audrey, Lemaur, Vincent, Olivier, Yoann, Cornil, Jérôme, Kennedy, Alan R., Diao, Ying, Lee, Wen-Ya, Mannsfeld, Stefan, Bao, Zhenan, Geerts, Yves H.
Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel o
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A36261
https://tud.qucosa.de/api/qucosa%3A36261/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A36261/attachment/ATT-0/
Autor:
Seychal, Guillem, Nickmilder, Pierre, Lemaur, Vincent, Ocando, Connie, Grignard, Bruno, Leclère, Philippe, Detrembleur, Christophe, Lazzaroni, Roberto, Sardon, Haritz, Aranburu, Nora, Raquez, Jean-Marie
Publikováno v:
In Composites Part A October 2024 185
Autor:
Stoeckel, Marc-Antoine, Olivier, Yoann, Gobbi, Marco, Dudenko, Dmytro, Lemaur, Vincent, Zbiri, Mohamed, Guilbert, Anne A. Y., D'Avino, Gabriele, Liscio, Fabiola, Migliori, Andrea, Ortolani, Luca, Demitri, Nicola, Jin, Xin, Jeong, Young-Gyun, Liscio, Andrea, Nardi, Marco-Vittorio, Pasquali, Luca, Razzari, Luca, Beljonne, David, Samori, Paolo, Orgiu, Emanuele
Publikováno v:
Adv. Mater. 33 (2021) 2007870
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic diso
Externí odkaz:
http://arxiv.org/abs/2105.05202
Autor:
Gueye, Magatte N., Vercouter, Alexandre, Jouclas, Rémy, Guérin, David, Lemaur, Vincent, Schweicher, Guillaume, Lenfant, Stéphane, Antidormi, Aleandro, Geerts, Yves, Melis, Claudio, Cornil, Jérôme, Vuillaume, Dominique
We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-o
Externí odkaz:
http://arxiv.org/abs/2102.05377
Autor:
Jacobs, Ian E., D'Avino, Gabriele, Lemaur, Vincent, Lin, Yue, Huang, Yuxuan, Chen, Chen, Harrelson, Thomas, Wood, William, Spalek, Leszek J., Mustafa, Tarig, O'Keefe, Christopher A., Ren, Xinglong, Simatos, Dimitrios, Tjhe, Dion, Statz, Martin, Strzalka, Joseph, Lee, Jin-Kyun, McCulloch, Iain, Fratini, Simone, Beljonne, David, Sirringhaus, Henning
Publikováno v:
J. Am. Chem. Soc. 2022, 144, 3005-3019
Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge t
Externí odkaz:
http://arxiv.org/abs/2101.01714
Autor:
Valentino, Laura, Campisciano, Vincenzo, Célis, Chloé, Lemaur, Vincent, Lazzaroni, Roberto, Gruttadauria, Michelangelo, Aprile, Carmela, Giacalone, Francesco
Publikováno v:
In Journal of Catalysis December 2023 428
Autor:
Stoeckel, Marc-Antoine, Olivier, Yoann, Gobbi, Marco, Dudenko, Dmytro, Lemaur, Vincent, Zbiri, Mohamed, Guilbert, Anne Y., DAvino, Gabriele, Liscio, Fabiola, Demitri, Nicola, Jin, Xin, Jeong, Young-Gyun, Nardi, Marco Vittorio, Pasquali, Luca, Razzari, Luca, Beljonne, David, Samori, Paolo, Orgiu, Emanuele
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermo
Externí odkaz:
http://arxiv.org/abs/1909.05344
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Wang, Yiwen, Luke, Joel, Privitera, Alberto, Rolland, Nicolas, Labanti, Chiara, Londi, Giacomo, Lemaur, Vincent, Toolan, Daniel T.W., Sneyd, Alexander J., Jeong, Soyeong, Qian, Deping, Olivier, Yoann, Sorace, Lorenzo, Kim, Ji-Seon, Beljonne, David, Li, Zhe, Gillett, Alexander J.
Publikováno v:
In Joule 19 April 2023 7(4):810-829