Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Lely method"'
Autor:
Savchenko, Dariya, Shanina, Bela, Kalabukhova, E., Pöppl, Andreas, Lancok, J., Mokhov, Evgeny
We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC wafers grown by the Lely method and by the sublimation “sandwich method” (SSM) with a donor concentration of about 10 17cm-3 at T=10–40K. The donor
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A21289
https://ul.qucosa.de/api/qucosa%3A21289/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A21289/attachment/ATT-0/
Autor:
D. D. Avrov, S. A. Kukushkin, A. O. Lebedev, M. F. Panov, V. V. Luchinin, A. V. Osipov, A. N. Gorlyak, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:968-971
A model is suggested for a quantitative analysis of the dependence of the dielectric function of hexagonal silicon carbide polytypes on photon energy in the range of 0.7–6.5 eV. The model, which is the sum of two Tauc–Lorentz oscillators (main an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be9f034a8fa00e84ec4b602a389e779e
https://doi.org/10.1134/s1063785020100028
https://doi.org/10.1134/s1063785020100028
Publikováno v:
Inorganic Materials. 56:928-933
4H-silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our experimental data and theoretical analysis, we have systematized the key factors responsible for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a9c2f5010ca107f9545c3ea933a1b3
https://doi.org/10.1134/s0020168520090034
https://doi.org/10.1134/s0020168520090034
Autor:
A. O. Lebedev, V. V. Luchinin, A. N. Gorlyak, A. S. Grashchenko, M. F. Panov, S. A. Kukushkin, A. V. Osipov, A. V. Markov
Publikováno v:
Technical Physics Letters. 46:763-766
The results of hardness and Young’s modulus study of near-surface layers of 4H-SiC hexagonal silicon carbide obtained by the modified Lely method from the C-face (000 $$\bar {1}$$ ) and Si-face (0001) at shallow depths of the indenter are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79f605162c4f0497341f1986474cf0c
https://doi.org/10.1134/s106378502008012x
https://doi.org/10.1134/s106378502008012x
Publikováno v:
Inorganic Materials. 54:1103-1108
We have analyzed phase equilibria in the Si–C–H–Ar system during silicon carbide ingot growth by the modified Lely method. The results indicate that the addition of even small amounts of hydrogen to an inert carrier gas leads to a sharp increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d23230cad60b3353d3582709b434f13b
https://doi.org/10.1134/s002016851811002x
https://doi.org/10.1134/s002016851811002x
Autor:
Ján Lančok, Ekaterina N. Kalabukhova, A. Poeppl, B. D. Shanina, Dariya Savchenko, E. N. Mokhov
We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC wafers grown by the Lely method and by the sublimation “sandwich method” (SSM) with a donor concentration of about 10 17cm-3 at T=10–40K. The donor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89eb66839275fbc43b414858dc41795b
http://arxiv.org/abs/1604.02920
http://arxiv.org/abs/1604.02920
Autor:
Yu. M. Tairov, A. V. Lebedev
Publikováno v:
Journal of Crystal Growth. 401:392-396
Theoretical and experimental studies of the phenomenon of polytypism in silicon carbide obtained by the Lely method have been presented. It is shown that the elementary theory of polytypism can be built on the basis of very general considerations, ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::606b3367ba9fcab26f015e7799ed9ae8
https://doi.org/10.1016/j.jcrysgro.2014.01.021
https://doi.org/10.1016/j.jcrysgro.2014.01.021
Autor:
Peter Philip, Christian Meyer
Publikováno v:
Crystal Growth & Design. 5:1145-1156
We use a numerical optimization method to determine the control parameters frequency, power, and coil position for the radio frequency (RF) induction heating of the growth apparatus during sublimation growth of SiC single crystals via physical vapo t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62a5993e60874a9e3e573a166f4a5eb6
https://doi.org/10.1021/cg049641m
https://doi.org/10.1021/cg049641m
Autor:
Peter Philip, Olaf Klein
Publikováno v:
Journal of Crystal Growth. 249:514-522
In this article, we use numerical simulation to investigate transient temperature phenomena during sublimation growth of SiC single crytals via physical vapor transport (also called the modified Lely method). We consider the evolution of temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cd98d9300ba2706a5096ad58fde4272
https://doi.org/10.1016/s0022-0248(02)02320-5
https://doi.org/10.1016/s0022-0248(02)02320-5
Autor:
Olaf Klein, Peter Philip
Publikováno v:
Journal of Crystal Growth. 247:219-235
This article presents transient numerical simulations of the temperature evolution during sublimation growth of SiC single crystals via physical vapor transport (also called the modified Lely method) including diffusion and radiation, investigating t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97fcd8642a844b23819b9c44ce123553
https://doi.org/10.1016/s0022-0248(02)01903-6
https://doi.org/10.1016/s0022-0248(02)01903-6