Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Lek Baubutr"'
Autor:
Hao Cui, Cliff Drowley, Ming Xiao, Lek Baubutr, Ruizhe Zhang, Edwards Andrew P, Subhash Pidaparthi, Jingcun Liu, Yuhao Zhang
Publikováno v:
IEEE Transactions on Power Electronics. 36:10959-10964
This letter reports the avalanche and surge current ruggedness of the industry's first 1.2-kV-class vertical GaN p-n diodes fabricated on 100-mm GaN substrates. The 1.2-kV vertical GaN p-n diodes with a 1.39-mm2 device area and an avalanche breakdown
Autor:
Ming Xiao, Yuhao Zhang, Hao Cui, Subhash Pidaparthi, Edwards Andrew P, Cliff Drowley, Ruizhe Zhang, Lek Baubutr, Michael Craven, Jingcun Liu
Publikováno v:
IEEE Transactions on Electron Devices. 68:2025-2032
This work describes the high-temperature performance and avalanche capability of normally- off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors (Fin-JFETs). The GaN Fin-JFETs were fabricated by NexGen Power S
Autor:
Ming Xiao, Cliff Drowley, Jingcun Liu, Yuhao Zhang, Hao Cui, Edwards Andrew P, Lek Baubutr, Subhash Pidaparthi, Ruizhe Zhang, Charles Coles
Publikováno v:
IEEE Electron Device Letters. 41:1328-1331
This work studies the avalanche characteristics of the 1.2 kV vertical GaN p-n diodes with implanted edge termination, based on quasi-static current-voltage ( I-V ) sweeps and unclamped inductive switching (UIS) tests. The UIS tests reveal a ~1.7 kV
Autor:
Edwards Andrew P, H. Cui, Jingcun Liu, Yuhao Zhang, Cliff Drowley, Subhash Pidaparthi, Lek Baubutr, C. Coles, Ming Xiao, W. Meier
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This work, for the first time, demonstrates a 1.2-kV-class, 4-A normally-off vertical GaN fin-channel JFET on GaN substrate, and characterizes its static and dynamic performance as well as avalanche robustness. The device shows an on/off current rati