Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Leizhi Sun"'
Autor:
Chuanxi Yang, Leizhi Sun, Brandt, Riley E., Sang Bok Kim, Xizhu Zhao, Jun Feng, Buonassisi, Tonio, Gordon, Roy G.
Publikováno v:
Journal of Applied Physics; 2017, Vol. 122 Issue 3, p1-5, 5p, 1 Color Photograph, 1 Chart, 3 Graphs
Autor:
Danny Chua, Helen Hejin Park, Roy G. Gordon, Rupak Chakraborty, Rachel Lenox Heasley, Leizhi Sun, Katy Hartman, Tonio Buonassisi, Vera Steinmann, Prasert Sinsermsuksakul, Rafael Jaramillo
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:901-908
Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The e
Autor:
Zhefeng Li, Yiqun Liu, Leizhi Sun, Roy G. Gordon, Prasert Sinsermsuksakul, Wontae Noh, Jaeyeong Heo
Publikováno v:
The Journal of Physical Chemistry C. 115:10277-10283
(Sn,Al)Ox composite films with various aluminum (Al) to tin (Sn) ratios were deposited using an atomic layer deposition technique. The chemisorption behavior of cyclic amide of tin(II) and trimethy...
Autor:
Xizhu Zhao, Roy G. Gordon, Jun Feng, Sang Bok Kim, Chuanxi Yang, Riley E. Brandt, Leizhi Sun, Tonio Buonassisi
Publikováno v:
Journal of Applied Physics. 122:045303
We measured the contact resistivity between tin(II) sulfide (SnS) thin films and three different metals (Au, Mo, and Ti) using a transmission line method (TLM). The contact resistance increases in the order Au
Autor:
Rafael Jaramillo, Riley E. Brandt, Tonio Buonassisi, Leizhi Sun, Vera Steinmann, Niall M. Mangan, Jian V. Li, Roy G. Gordon, Jeremy R. Poindexter, Katy Hartman
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through
Autor:
Riley E. Brandt, Rafael Jaramillo, Roy G. Gordon, Leizhi Sun, Helen Hejin Park, Vera Steinmann, Rupak Chakraborty, Tonio Buonassisi, Yun Seog Lee, Katy Hartman
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
Tin sulfide is regarded as a possible earth-abundant alternative for chalcogenide thin film photovoltaics. The material has strong absorption in the visible wavelength region and the possibility for high carrier mobility. We review recent progress fo
Autor:
Yun Seog Lee, Alex Polizzotti, Rafael Jaramillo, Roy G. Gordon, Rupak Chakraborty, Jeremy R. Poindexter, Vera Steinmann, Tonio Buonassisi, Katy Hartman, Riley E. Brandt, Helen Hejin Park, Leizhi Sun
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 26(44)
Tin sulfide (SnS), as a promising absorber material in thin-film photovoltaic devices, is described. Here, it is confirmed that SnS evaporates congruently, which provides facile composition control akin to cadmium telluride. A SnS heterojunction sola
Autor:
Leizhi Sun, Sang Woon Lee, Prasert Sinsermsuksakul, Chuanxi Yang, Helen Hejin Park, Sang Bok Kim, Roy G. Gordon
Publikováno v:
Advanced Energy Materials. 4:1400496
Thin-film solar cells are made by vapor deposition of Earth-abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are syst
Autor:
Richard Haight, Roy G. Gordon, Sang Bok Kim, Prasert Sinsermsuksakul, Leizhi Sun, Helen Hejin Park
Publikováno v:
Applied Physics Letters. 103:181904
Band alignment is critical to the performance of heterojunction thin film solar cells. In this letter, we report band alignment studies of SnS/Zn(O,S) heterojunctions with various compositions of Zn(O,S). Valence band offsets (VBOs) are measured by f
Autor:
Jaeyeong Heo, Rupak Chakraborty, Prasert Sinsermsuksakul, Leizhi Sun, Sang Bok Kim, Katy Hartman, Tonio Buonassisi, Roy G. Gordon, Helen Hejin Park
Publikováno v:
Applied Physics Letters. 102:053901
SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/