Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Leini Wang"'
Autor:
Leini Wang, Gang He, Wenhao Wang, Xiaofen Xu, Shanshan Jiang, Elvira Fortunato, Rodrigo Martins
Publikováno v:
Journal of Materials Science & Technology. 159:41-51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::998ecf76abf1af800fcfa066363dea61
https://doi.org/10.1016/j.jmst.2023.02.046
https://doi.org/10.1016/j.jmst.2023.02.046
Publikováno v:
Journal of Materials Science & Technology. 141:100-109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::316a3695b0e6fec8e0ba2ffc7a786003
https://doi.org/10.1016/j.jmst.2022.09.016
https://doi.org/10.1016/j.jmst.2022.09.016
Autor:
Xiaoyu Wu, Gang He, Wenhao Wang, Leini Wang, Xiaofen Xu, Qian Gao, Yanmei Liu, Shanshan Jiang
Publikováno v:
IEEE Transactions on Electron Devices. 70:105-112
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56dde3447b2746da705e1aaaf0f8bdc1
https://doi.org/10.1109/ted.2022.3220482
https://doi.org/10.1109/ted.2022.3220482
Publikováno v:
ACS Applied Materials & Interfaces. 14:47136-47147
Multifunctionality and self-powering are key technologies for next-generation wearable electronics. Herein, an interdigitated MXene/TiS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28e32aa4c715b921e5b665393c370be0
https://doi.org/10.1021/acsami.2c15117
https://doi.org/10.1021/acsami.2c15117
Publikováno v:
IEEE Transactions on Electron Devices. 69:3169-3174
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238002c1eacb8659a8e9bfbc169ed894
https://doi.org/10.1109/ted.2022.3164632
https://doi.org/10.1109/ted.2022.3164632
Publikováno v:
ACS Nano. 16:4961-4971
Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65e151761b1ac5edeb85c559f1ca156d
https://doi.org/10.1021/acsnano.2c01286
https://doi.org/10.1021/acsnano.2c01286
Publikováno v:
IEEE Transactions on Electron Devices. 69:1065-1068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd48a1ffd6d4e19371e042dc45db3403
https://doi.org/10.1109/ted.2022.3140405
https://doi.org/10.1109/ted.2022.3140405
Publikováno v:
RSC Advances. 12:14986-14997
Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ceaada0b21dbfb5264aa66f81c2d30
https://doi.org/10.1039/d2ra01051h
https://doi.org/10.1039/d2ra01051h
Autor:
Yongchun Zhang, Wenhao Wang, Qian Gao, Gang He, Leini Wang, Xiaofen Xu, Yufeng Xia, Miao Zhang, Bing Yang
Publikováno v:
Journal of Materials Science & Technology. 87:143-154
In current study, the rare-reported solution-driven DyOx films have been prepared to act as the dielectric layer of high performance InZnO/DyOx thin film transistors (TFTs). Annealing temperature dependent thermal decomposition, morphology, crystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::006a71648db8317bd59c1ab9dc4aa3a6
https://doi.org/10.1016/j.jmst.2021.01.066
https://doi.org/10.1016/j.jmst.2021.01.066
Publikováno v:
IEEE Transactions on Electron Devices. 68:4437-4443
In this article, the preparation of HfLaOx gate dielectric thin films by the spin coating method is proposed. The in-depth physical properties of the as-prepared HfLaOx films were investigated as functions of annealing temperatures. Decided by the ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c594e7ec8a0b6116b1f53f055b19000
https://doi.org/10.1109/ted.2021.3095039
https://doi.org/10.1109/ted.2021.3095039