Výsledky vyhledávání - "Leikert, Berengar"

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Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$

Autor: Alarab, Fatima, Hricovini, Karol, Leikert, Berengar, Richter, Christine, Schmitt, Thorsten, Sing, Michael, Claessen, Ralph, Minár, Ján, Strocov, Vladimir N.

Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ tow

Externí odkaz: http://arxiv.org/abs/2310.12669

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Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3

Autor: Tschirner, Teresa, Leikert, Berengar, Kern, Felix, Wolf, Daniel, Lubk, Axel, Kamp, Martin, Miller, Kirill, Hartmann, Fabian, Höfling, Sven, Büchner, Bernd, Dufouleur, Joseph, Gabay, Marc, Sing, Michael, Claessen, Ralph, Veyrat, Louis

Publikováno v: Phys. Rev. B 108, 245405 (2023)

Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogen

Externí odkaz: http://arxiv.org/abs/2210.07682

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Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Autor: Gabel, Judith, Pickem, Matthias, Scheiderer, Philipp, Dudy, Lenart, Leikert, Berengar, Fuchs, Marius, Stübinger, Martin, Schmitt, Matthias, Küspert, Julia, Sangiovanni, Giorgio, Tomczak, Jan M., Held, Karsten, Lee, Tien-Lin, Claessen, Ralph, Sing, Michael

Publikováno v: Adv. Electron. Mater. 2021, 2101006

Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to

Externí odkaz: http://arxiv.org/abs/2202.10778

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Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show th

Externí odkaz: http://arxiv.org/abs/2110.15158

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Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Autor: Leikert, Berengar, Gabel, Judith, Schmitt, Matthias, Stübinger, Martin, Scheiderer, Philipp, Veyrat, Louis, Lee, Tien-Lin, Sing, Michael, Claessen, Ralph

Publikováno v: Phys. Rev. Materials 5, 065003 (2021)

Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ capp

Externí odkaz: http://arxiv.org/abs/2104.06187

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Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces

Autor: Maier, Patrick, Hartmann, Fabian, Gabel, Judith, Frank, Maximilian, Kuhn, Silke, Scheiderer, Philipp, Leikert, Berengar, Sing, Michael, Worschech, Lukas, Claessen, Ralph, Höfling, Sven

Publikováno v: Applied Physics Letters 110, 093506 (2017)

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inher

Externí odkaz: http://arxiv.org/abs/1610.05146

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