Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Leijun Tang"'
Autor:
Arvind Sundarrajan, Bharat Bhushan, Leijun Tang, H. M. Calvin Chua, King-Jien Chui, Prayudi Lianto, Yu Gu, Guan Huei See, Ai Long Wu, Xin Wang, B. S. S. Chandra Rao
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 7:1592-1597
Under-bump metallization R c is a critical metric for high-density interconnect in electronic devices. We developed a test vehicle to characterize the impact of unit processes on R c for 10- $\mu \text{m}$ polymer passivation opening. We demonstrate
Autor:
Swee Tiam Tan, Junliang Zhao, Iwan, S., Xiao Wei Sun, Xiaohong Tang, Jiandong Ye, Bosman, M., Leijun Tang, Guo-Qiang Lo, Teo, K. L.
Publikováno v:
IEEE Transactions on Electron Devices; Jan2010, Vol. 57 Issue 1, p129-133, 5p, 1 Black and White Photograph, 5 Graphs
Publikováno v:
ECS Meeting Abstracts. :742-742
not Available.
Autor:
Lianto, Prayudi, Chui, King-Jien, Bhushan, Bharat, Chua, H. M. Calvin, Tang, Leijun, Rao, B. S. S. Chandra, Wang, Xin, Wu, Ai Long, Gu, Yu, See, Guan Huei, Sundarrajan, Arvind
Publikováno v:
IEEE Transactions on Components, Packaging & Manufacturing Technology; Oct2017, Vol. 7 Issue 10, p1592-1597, 6p
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2015, pi-xl, 40p
Publikováno v:
Proceedings of the 21th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2014, pi-xliv, 44p
Publikováno v:
Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005); 2005, p273-276, 4p
Publikováno v:
ULSI Semiconductor Technology Atlas; 2003, pi-xii, 9p