Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Leif Scheick"'
Autor:
Tasso von Windheim, Kristin H. Gilchrist, Charles B. Parker, Stephen Hall, James B. Carlson, David Stokes, Nicholas G. Baldasaro, Charles T. Hess, Leif Scheick, Bernard Rax, Brian Stoner, Jeffrey T. Glass, Jason J. Amsden
Publikováno v:
Micromachines, Vol 14, Iss 5, p 973 (2023)
This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vac
Externí odkaz:
https://doaj.org/article/f8213e1637c845b1b071314f7c27e258
Publikováno v:
2023 IEEE Aerospace Conference.
Autor:
Insoo Jun, Wousik Kim, D. O. Thorbourn, Aaron J. Kenna, Bernard G. Rax, Philippe R. Adell, Steve McClure, Leif Scheick
Publikováno v:
IEEE Transactions on Nuclear Science. 66:163-169
A total dose testing methodology for qualifying bipolar analog circuits for the Europa Clipper (EC) mission is presented. The method leverages the unique mission dose rate profile to bound device performance and reduces qualification test time from 1
Autor:
Patrick Gevargiz, Leif Scheick, Aaron J. Kenna, Jason L. Thomas, Amanda N. Bozovich, S.S. McClure, Stephanie A. Zajac, Duc N. Nguyen, Joe Davila, Bernard G. Rax, Mitch J. Sundgaard, Kelly W. Stanford
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
We present the results of total ionizing dose testing and analysis on Electric, Electronic, and Electromechanical (EEE) parts, tested by the Jet Propulsion Laboratory in support of the Europa Clipper Mission.
Publikováno v:
IEEE Transactions on Nuclear Science. 65:719-723
A power MOSFET demonstrated destructive single-event effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage ( $V_{\text {DS}}$ ) that exceeded th
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We present SEE test results for the Cobham Space Wire transceiver after dosing the device to 300 krad(Si). We performed SEU characterization with variable data rates and patterns. Events resembling SEFIs were also observed and recorded.
Autor:
Farokh Irom, Sergeh Vartanian, Leif Scheick, Gregory R. Allen, Larry D. Edmonds, S.S. McClure, Duc N. Nguyen, Kelly W. Stanford
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
We present total ionizing dose (TID) measurements of a commercial Samsung NAND flash memory intended for use on a high dose mission. Statistical variation in the first measurements necessitates a second set of measurements with an increased sample se
Autor:
Sergeh Vartanian, Leif Scheick
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
A power switch solution for a space environment using commercial off the shelf (COTS) devices is presented. The application was for a high load switch required to turn-on within 1 us that could support greater than 600 volts and current requirement o
Autor:
Allan H. Johnston, Leif Scheick
This chapter reviews the effects of space radiation on microelectronic devices, and shows how device scaling has affected their vulnerability to radiation. The most dramatic impact has been on single-particle effects, particularly those caused by gal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9051892127de48be33ed933204911ba
https://doi.org/10.1201/b12722-2
https://doi.org/10.1201/b12722-2
Autor:
Gregory R. Allen, L. G. Pearce, Nick W. van Vonno, Leif Scheick, Sergeh Vartanian, Shirley Hart, Farokh Irom
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Single-event destructive behavior and latchup has been observed in two separate radiation-hardened switching regulators. We discuss the test conditions and observed results.