Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Lei-Jun Tang"'
Autor:
Lei Jun. Tang
In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01ddbefa68e3495e7ae6ff6c9983eab0
https://doi.org/10.32657/10356/3348
https://doi.org/10.32657/10356/3348
Autor:
Yung-Tsan Yu, Lei-Jun Tang, Hong-Meng Ho, Yue-Jia Zhang, Chun-Shu Huang, Wei Koh, Kay-Soon Goh
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
There is a growing interest in copper wire bonding for IC interconnection due to the cost savings and better material properties. Recently, palladium-coated copper (Pd-Cu) wire has emerged as the preferred choice over bare Cu wire in fine wire diamet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca9fd2abf0eb279d912f13b276e407d
https://doi.org/10.1109/ectc.2011.5898736
https://doi.org/10.1109/ectc.2011.5898736
Publikováno v:
2010 12th Electronics Packaging Technology Conference.
The application of copper wire coated with Palladium is a solution to prevent copper oxidation during the bonding process. This is true in the Second Bond but may not be the situation when it comes to First Bond. This is because during the Free Air B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfb4aa9e55c86e1695da98251dc20cf9
https://doi.org/10.1109/eptc.2010.5702754
https://doi.org/10.1109/eptc.2010.5702754
Autor:
Leng-Seow Tan, Luping Shi, Xinke Liu, Kian-Ming Tan, Yee-Chia Yeo, Guo-Qiang Lo, Lei-Jun Tang, Ming Zhu, Zhi-Chien Lee, Hock Koon Lee, Hock-Chun Chin, Chih-Hang Tung
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We report a novel surface passivation technology employing a silane-ammonia gas mixture to realize very high quality high-k gate dielectric on GaAs. This technology eliminates the poor quality native oxide while forming an ultrathin silicon oxynitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e17f389a4c57d89a0756161c2f032a0c
https://doi.org/10.1109/iedm.2008.4796700
https://doi.org/10.1109/iedm.2008.4796700
Autor:
Sungjoo Lee, S.J. Whang, Dim-Lee Kwong, Fei Gao, Chunxiang Zhu, Ji Sheng Pan, Lei Jun Tang, Nan Wu
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
Ge-MOS devices (EOT /spl sim/7.5 /spl Aring/, J/sub g/ /spl sim/ 10/sup -3/ A/cm/sup 2/) are fabricated on both n- & p-type Ge-substrates, using novel surface passivation and TaN/HfO/sub 2/ gate stack. Results show that the plasma-PH/sub 3/ treatment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1120481b576b41bab1af2473f8de4c9
https://doi.org/10.1109/iedm.2004.1419140
https://doi.org/10.1109/iedm.2004.1419140
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2016, Vol. 34 Issue 1, p011205-1-011205-7, 7p
Publikováno v:
Journal of Applied Physics. 104:093527
A study of the surface passivation of strained InGaAs using vacuum annealing and silane (SiH4) passivation was reported for the first time. X-ray photoelectron spectroscopy reveals the elimination of As–O bond after vacuum annealing and SiH4 surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::212890cd581c4f8ce1e8ea0944983c6d
https://doi.org/10.1063/1.3010303
https://doi.org/10.1063/1.3010303
Autor:
Lei-Jun Tang, Hong-Meng Ho, Wei Koh, Yue-Jia Zhang, Kay-Soon Goh, Chun-Shu Huang, Yung-Tsan Yu
Publikováno v:
2011 IEEE 61st Electronic Components & Technology Conference (ECTC); 2011, p1673-1678, 6p
Publikováno v:
2010 12th Electronics Packaging Technology Conference (EPTC); 2010, p777-782, 6p
Autor:
Hock-Chun Chin, Ming Zhu, Zhi-Chien Lee, Xinke Liu, Kian-Ming Tan, Hock Koon Lee, Luping Shi, Lei-Jun Tang, Chih-Hang Tung, Guo-Qiang Lo, Leng-Seow Tan, Yee-Chia Yeo
Publikováno v:
2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p