Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Leiðarar (rafmagn)"'
Autor:
Carsten Dahl Mørch, Lars Arendt-Nielsen, Ole Kæseler Andersen, Thordur Helgason, Rosa Hugosdottir
Publikováno v:
BMC Neuroscience, Vol 20, Iss 1, Pp 1-11 (2019)
BMC Neuroscience
Hugosdottir, R, Mørch, C D, Andersen, O K, Helgason, T & Arendt-Nielsen, L 2019, ' Preferential activation of small cutaneous fibers through small pin electrode also depends on the shape of a long duration electrical current ', BMC Neuroscience, vol. 20, no. 1, 48 . https://doi.org/10.1186/s12868-019-0530-8
BMC Neuroscience
Hugosdottir, R, Mørch, C D, Andersen, O K, Helgason, T & Arendt-Nielsen, L 2019, ' Preferential activation of small cutaneous fibers through small pin electrode also depends on the shape of a long duration electrical current ', BMC Neuroscience, vol. 20, no. 1, 48 . https://doi.org/10.1186/s12868-019-0530-8
Publisher's version (útgefin grein)
Background Electrical stimulation is widely used in experimental pain research but it lacks selectivity towards small nociceptive fibers. When using standard surface patch electrodes and rectangular pulses, l
Background Electrical stimulation is widely used in experimental pain research but it lacks selectivity towards small nociceptive fibers. When using standard surface patch electrodes and rectangular pulses, l
Autor:
F. A. Benimetskiy, V. A. Sharov, P. A. Alekseev, V. Kravtsov, K. B. Agapev, I. S. Sinev, I. S. Mukhin, A. Catanzaro, R. G. Polozkov, E. M. Alexeev, A. I. Tartakovskii, A. K. Samusev, M. S. Skolnick, D. N. Krizhanovskii, I. A. Shelykh, I. V. Iorsh
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101126-101126-5 (2019)
Publisher's version (útgefin grein).
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic respons
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic respons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc5a7022e72abdc29334f5f8cb178596
https://eprints.whiterose.ac.uk/147495/8/1.5117259.pdf
https://eprints.whiterose.ac.uk/147495/8/1.5117259.pdf
Publikováno v:
Sensors
Volume 19
Issue 13
Sensors, Vol 19, Iss 13, p 3023 (2019)
Sensors (Basel, Switzerland)
Volume 19
Issue 13
Sensors, Vol 19, Iss 13, p 3023 (2019)
Sensors (Basel, Switzerland)
Publisher's version (útgefin grein)
In order to minimize the number of evaluations of high-fidelity (fine) model in the optimization process, to increase the optimization speed, and to improve optimal solution accuracy, a robust and computation
In order to minimize the number of evaluations of high-fidelity (fine) model in the optimization process, to increase the optimization speed, and to improve optimal solution accuracy, a robust and computation