Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Lei, Siqi"'
Autor:
Yang, Kefan, Lei, Siqi, Qin, Xiaoli, Mai, Xiaoxue, Xie, Weibo, Yang, Shengrong, Wang, Jinqing
Publikováno v:
In Journal of the Mechanical Behavior of Biomedical Materials July 2024 155
Autor:
Yang, Gaochuang, Lei, Siqi, Chang, Kun, Ma, Limin, Li, Zhangpeng, Yang, Shengrong, Wang, Jinqing
Publikováno v:
In Chemical Engineering Journal 1 June 2024 489
Publikováno v:
In Journal of the Mechanical Behavior of Biomedical Materials February 2024 150
Publikováno v:
In Food Research International November 2023 173 Part 2
Autor:
Cheng, Wei-Chih, He, Minghao, Lei, Siqi, Wang, Liang, Wu, Jingyi, Zeng, Fanming, Hu, Qiaoyu, Zhao, Feng, Chan, Mansun, Guangrui, Xia, Yu, Hongyu
In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress Si
Externí odkaz:
http://arxiv.org/abs/1908.00125
Autor:
Wu, Jingyi, Lei, Siqi, Cheng, Wei-Chih, Sokolovskij, Robert, Wang, Qing, Guangrui, Xia, Yu, Hongyu
O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop
Externí odkaz:
http://arxiv.org/abs/1908.00124
Autor:
Cheng, Wei-Chih, Fang, Tao, Lei, Siqi, Zhao, Yunlong, He, Minghao, Chan, Mansun, Guangrui, Xia, Zhao, Feng, Yu, Hongyu
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the surface passi
Externí odkaz:
http://arxiv.org/abs/1903.05290
Akademický článek
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Autor:
Yao, Yao1,2 (AUTHOR), Lei, Siqi1 (AUTHOR), Guo, Zijin1 (AUTHOR), Li, Yuanyuan1 (AUTHOR), Ren, Shuliang1 (AUTHOR), Liu, Zhihang3 (AUTHOR), Guan, Qingfeng1 (AUTHOR), Luo, Peng4 (AUTHOR)
Publikováno v:
International Journal of Geographical Information Science. Jun2023, Vol. 37 Issue 6, p1420-1448. 29p.
Autor:
Lei, Siqi, Wang, Sinong, Gao, Boxu, Zhan, Yulu, Zhao, Qiancheng, Jin, Shanshan, Song, Guoxin, Lyu, Xinchun, Zhang, Yahong, Tang, Yi
Publikováno v:
In Journal of Colloid And Interface Science 1 October 2020 577:181-190