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pro vyhledávání: '"Lehui Su"'
Publikováno v:
Micromachines, Vol 14, Iss 12, p 2149 (2023)
A new structure for PNPN tunnel field-effect transistors (TFETs) has been designed and simulated in this work. The proposed structure incorporates the polarity bias concept and the gate work function engineering to improve the DC and analog/RF figure
Externí odkaz:
https://doaj.org/article/b286acb7d74640e3b12a8576350d2043
