Zobrazeno 1 - 10
of 160
pro vyhledávání: '"Lee Mi Do"'
Publikováno v:
IEEE Electron Device Letters. 37:595-598
In this letter, we discuss the temperature distribution of light-illuminated Si substrates with time and the successful fabrication of high-performance, solution-processed indium-oxide thin-film transistors within an annealing time of 2 min using a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d7122c5388b02f9023a3a0b1f6e50a2
https://doi.org/10.1109/led.2016.2545692
https://doi.org/10.1109/led.2016.2545692
Publikováno v:
Journal of the Korean Physical Society. 68:971-974
For the fabrication of low-temperature solution-processed metal-oxide thin-film transistors (TFTs), alternative annealing processes have recently been studied for reduced fabrication cost and applications to flexible devices. Indium nitrate solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::979c31eca129cd0099d2a0ea142d66f6
https://doi.org/10.3938/jkps.68.971
https://doi.org/10.3938/jkps.68.971
Autor:
Chan-mo Kang, Kyu-Ha Baek, Changhee Lee, Lee-Mi Do, Hyoung Jin Choi, Man-Young Park, Hyunsik Chae, Hyun-Gwan Kim, Hyeonwoo Shin
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:2632-2636
Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81372735060cd51a641a0658a0a167c
https://doi.org/10.1166/jnn.2016.11080
https://doi.org/10.1166/jnn.2016.11080
Autor:
Lee-Mi Do, Kang Bok Lee, Jaeeun Hwang, Kyu Ha Baek, Hong Doo Kim, Jong Sun Choi, Dong-Wook Kim, Jin Hwa Ryu, Jaehoon Park
Publikováno v:
Electronic Materials Letters. 11:82-87
In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7086339a3d45915d91c190ee83f76100
https://doi.org/10.1007/s13391-014-4209-0
https://doi.org/10.1007/s13391-014-4209-0
Autor:
Jeong, Yesul, Pearson, Christopher, Yong Uk Lee, Kyun Ahn, Chae-Ryong Cho, Jaeeun Hwang, Hongdoo Kim, Lee-Mi Do, Petty, Michael C.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 7, p074509-1-074509-7, 7p, 2 Diagrams, 1 Chart, 5 Graphs
Publikováno v:
ETRI Journal. 36:841-846
This study proposes a novel optical sensor structure based on a refractometer combining a bend waveguide with an air trench. The optical sensor is a 1 × 2 splitter structure with a reference channel and a sensing channel. The reference channel has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402e40ede463363ca29b6c9dbf88f98c
https://doi.org/10.4218/etrij.14.0114.0413
https://doi.org/10.4218/etrij.14.0114.0413
Autor:
Sang-Uk Cho, Jin Hwa Ryu, Bong Kuk Lee, Kyu-Ha Baek, Myung Yung Jeong, Lee-Mi Do, Jaehoon Park
Publikováno v:
Journal of the Korean Physical Society. 65:450-456
This study proposes a simple cost-effective method of optical interconnection with a view to minimizing and overcoming the excess loss caused by the alignment tolerance between optical waveguides in the integration/interface process in order to fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789efee14706b8fbb9efbe91c6fa785e
https://doi.org/10.3938/jkps.65.450
https://doi.org/10.3938/jkps.65.450
Publikováno v:
Organic Electronics. 14:2101-2107
The electrical properties of top-contact pentacene thin-film transistors (TFTs) with a poly(methyl methacrylate) (PMMA) gate dielectric were analyzed in air and vacuum environments. Compared to the vacuum case, the pentacene TFT in air exhibited lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba3ca721b8be10e9ff8b88bc08e0c47
https://doi.org/10.1016/j.orgel.2013.05.009
https://doi.org/10.1016/j.orgel.2013.05.009
Autor:
Kyu-Ha Baek, Hong Seung Kim, Jin Hwa Ryu, Chang Hoi Kim, Jaehoon Park, Lee-Mi Do, Jong Hoon Lee
Publikováno v:
Journal of the Korean Physical Society. 62:1176-1182
We investigated the incorporation of Ga into zinc-tin-oxide (ZTO) thin-film transistors (TFTs) and assessed the TFTs’ electrical and stability properties. The Ga-doped ZTO (ZTO:Ga) thin films were deposited on thermally oxidized silicon substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f003e0236b0b65dbbc7166049606475b
https://doi.org/10.3938/jkps.62.1176
https://doi.org/10.3938/jkps.62.1176
Autor:
Lee Mi Do, Kyu Ha Baek, Jong Hoon Lee, Nak Woon Jang, Hong Seung Kim, Young Yun, Chang Hoi Kim
Publikováno v:
Journal of the Korean Physical Society. 62:937-941
We fabricated a series of ZnO-based thin-film transistors (TFTs) in which the Mg composition ratio in the active layer was varied by controlling the RF power applied to the ZnO and the Mg0.3Zn0.7O targets. Mg x Zn1−x O alloy films were deposited by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645b9b864cea62d41a43101e8b2339a6
https://doi.org/10.3938/jkps.62.937
https://doi.org/10.3938/jkps.62.937