Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Lee Kammerdiner"'
Publikováno v:
Integrated Ferroelectrics. 66:171-178
Most applications of high-K paraelectrics involve microwave frequencies; tunable microwave filters and phase shifters are obvious examples. Applications such as power supply decoupling and some tunable microwave devices make use of discrete capacitor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3696a7043b32292494bfc5187b634012
https://doi.org/10.1080/10584580490895040
https://doi.org/10.1080/10584580490895040
Publikováno v:
Materials Letters. 57:4147-4150
Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition (MOD) method. The structures of these films were analyzed by X-ray diffraction. The electrical measurements were performed on met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2194f60d172ecf913d61efc2644e6a17
https://doi.org/10.1016/s0167-577x(03)00280-5
https://doi.org/10.1016/s0167-577x(03)00280-5
Publikováno v:
Integrated Ferroelectrics. 58:1395-1402
In order to integrate a ferroelectric-based device into a larger circuit, one must create an equivalent circuit model for the device. Ferroelectric materials contain a number of complicated parameters that make this task far from trivial. In a Ba0.5S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c569bc3615672430d82e9365ad0b6017
https://doi.org/10.1080/714040797
https://doi.org/10.1080/714040797
Publikováno v:
Integrated Ferroelectrics. 58:1395-1402
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff289b9f8edd390aaa1601585a61b06
https://doi.org/10.1080/10584580390259894
https://doi.org/10.1080/10584580390259894
Publikováno v:
Integrated Ferroelectrics. 53:413-420
Much of the interest in Ba0.5Sr0.5TiO3 (BST) thin films has focused on DRAM applications. For this application, the most studied characteristics have been the dielectric constant and the leakage current, both of which are usually measured either at D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72edc69856193e84f902b8b7b80ecec4
https://doi.org/10.1080/714040690
https://doi.org/10.1080/714040690
Publikováno v:
Thin Solid Films. 402:307-310
In this work, the growth and study of dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films grown on thin Bi layer coated Pt(111)/Ti/SiO2/Si substrates, depending on thin Bi layer thickness is reported. The BST thin film (thickness 180 nm) grown o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfbd0ed2aa22833665bc63f81395007f
https://doi.org/10.1016/s0040-6090(01)01611-x
https://doi.org/10.1016/s0040-6090(01)01611-x
Publikováno v:
Integrated Ferroelectrics. 38:289-295
High dielectric constant Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) thin films were deposited on Pt/Ti/SiO2/Si substrates by spin on metal-organic decomposition (MOD) technique. Undoped and 0.4% Mg-doped BCTZ thin films were annealed in the temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d159c1c5f19cb0b4b90679fd4b6721f5
https://doi.org/10.1080/10584580108016942
https://doi.org/10.1080/10584580108016942
Publikováno v:
Applied Physics Letters. 84:771-773
Ba0.96Ca0.04Ti0.84Zr0.16O3 films acceptor doped with Sc were deposited on Pt/TiO2/SiO2/Si substrates using radio frequency magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450 °C, which allows this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11e2d2232b56137d519e31df1faae2c4
https://doi.org/10.1063/1.1645313
https://doi.org/10.1063/1.1645313
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1406-1410
Two ionized cluster beam (ICB) sources were used to deposit PbTiO3 films 300 nm thick onto Pt‐metallized, oxidized Si wafers 100 mm in diameter. Pb was deposited from one ICB source and Ti from the other. The deposition was carried out in a mixture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7771d9ee97d866dce9f0febf138c44f7
https://doi.org/10.1116/1.578562
https://doi.org/10.1116/1.578562
Publikováno v:
Applied Physics Letters. 78:3517-3519
Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) thin films have been proposed as a promising material for microelectronic device applications based on high dielectric materials. Perovskite polycrystalline Mg-doped BCTZ thin films were fabricated on a Pt/T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f6085a6bb1e8ad4df828f34eb09bafe
https://doi.org/10.1063/1.1375002
https://doi.org/10.1063/1.1375002