Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Lee Joung Joo"'
Autor:
D. Sherlekar, B. Cheng, X-W. Lin, Victor Moroz, Lee Joung Joo, Suketu A. Parikh, Munkang Choi, Po-Wen Chan, P. Asenov
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We explore six different PR (Power Rail) design options in the range of library cell heights from 100 nm to 130 nm for the 1nm design rules (i.e. CPP (Contacted Poly Pitch) of 40 nm and minimum MP (Metal Pitch) of 20 nm). All these design options inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4155fd8fa441df3e312a9301a38ee4
https://doi.org/10.1109/vlsitechnology18217.2020.9265022
https://doi.org/10.1109/vlsitechnology18217.2020.9265022
Autor:
Hsiang-Jen Huang, Roey Shaviv, Lee Joung Joo, Balasubramanian S. Pranatharthi Haran, Nicolas Loubet, Suketu A. Parikh, A. Simon, Takeshi Nogami, S. Reidy, Rong Tao, M. Gage, Nicholas A. Lanzillo, M. Stolfi, Prasad Bhosale
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We demonstrate a design-technology co-optimization (DTCO) solution for enabling novel composite interconnects in next-generation high-performance computing (HPC) applications. Minimum-pitch signal line optimization with aggressively shrunk feature si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cf619ac69174397e98b98f31b3e95d2
https://doi.org/10.1109/vlsitechnology18217.2020.9265021
https://doi.org/10.1109/vlsitechnology18217.2020.9265021
Autor:
Keyvan Kashefizadeh, Jennifer Tseng, Ramkumar Vinnakota, Feng Chen, Lee Joung Joo, Mehul Naik, Zhiyuan Wu, Shen Gang, Wesley Suen, Yufei Hu, Pethe Shirish
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
Ruthenium (Ru) and Copper (Cu) interface promotes void-free Cu gap-fill through a Cu reflow approach. However, reliability issues such as Electromigration (EM) and time-dependent dielectric breakdown (TDDB) have delayed industry adoption of Ru liner.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af23336a28b52e5c849d8156682be39
https://doi.org/10.1109/iitc.2018.8430464
https://doi.org/10.1109/iitc.2018.8430464
Autor:
Jennifer Tseng, Zhiyuan Wu, Kevin Moraes, Lee Joung Joo, Abhinav Kumar, Amir Wachs, Mehul Naik, Kourosh Nafisi, Dror Shemesh, Jorge Pablo Fernandez
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
We present here our studies on using electron beams to locate copper fill voids in dual damascene structures down to 10nm CD. It is shown that the e-beam technique can be optimized for detecting embedded voids in non-destructive manner that enables f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b601d0a7fd7d2509f7233f988780b5eb
https://doi.org/10.1109/iitc.2018.8457123
https://doi.org/10.1109/iitc.2018.8457123