Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Lee II, Edwin W."'
Autor:
Krishnamoorthy, Sriram, Lee II, Edwin W., Lee, Choong Hee, Zhang, Yuewei, McCulloch, William D., Johnson, Jared M., Hwang, Jinwoo, Wu, Yiying, Rajan, Siddharth
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By expl
Externí odkaz:
http://arxiv.org/abs/1606.00509
Autor:
Lee II, Edwin W., Lee, Choong Hee, Paul, Pran K., Ma, Lu, McCulloch, William D., Krishnamoorthy, Sriram, Wu, Yiying, Arehart, Aaron, Rajan, Siddharth
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemi
Externí odkaz:
http://arxiv.org/abs/1505.05196
Autor:
Ma, Lu, Nath, Digbijoy N., Lee II, Edwin W., Lee, Choong Hee, Arehart, Aaron, Rajan, Siddharth, Wu, Yiying
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the fi
Externí odkaz:
http://arxiv.org/abs/1405.2479
The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were
Externí odkaz:
http://arxiv.org/abs/1402.1816
Autor:
Krishnamoorthy, Sriram, Lee II, Edwin W., Choong Hee Lee, Yuewei Zhang, McCulloch, William D., Johnson, Jared M., Jinwoo Hwang, Yiying Wu, Rajan, Siddharth
Publikováno v:
Applied Physics Letters; 10/31//2016, Vol. 109 Issue 18, p183505-1-183505-5, 5p, 1 Diagram, 4 Graphs
Autor:
Choong Hee Lee, McCulloch, William, Lee II, Edwin W., Lu Ma, Krishnamoorthy, Sriram, Jinwoo Hwang, Yiying Wu, Rajan, Siddharth
Publikováno v:
Applied Physics Letters; 11/9/2015, Vol. 107 Issue 19, p1-4, 4p, 1 Diagram, 4 Graphs
Autor:
Lee II, Edwin W., Choong Hee Lee, Paul, Pran K., Lu Ma, McCulloch, William D., Krishnamoorthy, Sriram, Yiying Wu, Arehart, Aaron R., Rajan, Siddharth
Publikováno v:
Applied Physics Letters; 9/7/2015, Vol. 107 Issue 10, p1-4, 4p, 1 Diagram, 5 Graphs
Autor:
Lee II, Edwin W., Lu Ma, Nath, Digbijoy N., Choong Hee Lee, Arehart, Aaron, Wu, Yiying, Rajan, Siddharth
Publikováno v:
Applied Physics Letters; 11/17/2014, Vol. 105 Issue 20, p1-4, 4p, 1 Color Photograph, 6 Graphs
Autor:
Lu Ma, Nath, Digbijoy N., Lee II, Edwin W., Lee, Choong Hee, Mingzhe Yu, Arehart, Aaron, Rajan, Siddharth, Yiying Wu
Publikováno v:
Applied Physics Letters; 8/18/2014, Vol. 105 Issue 7, p1-5, 5p, 3 Diagrams, 2 Graphs
Autor:
Laskar, Masihhur R., Nath, Digbijoy N., Lu Ma, Lee II, Edwin W., Choong Hee Lee, Kent, Thomas, Zihao Yang, Mishra, Rohan, Roldan, Manuel A., Idrobo, Juan-Carlos, Pantelides, Sokrates T., Pennycook, Stephen J., Myers, Roberto C., Yiying Wu, Rajan, Siddharth
Publikováno v:
Applied Physics Letters; 3/3/2014, Vol. 104 Issue 9, p1-4, 4p, 2 Black and White Photographs, 3 Graphs