Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Lee H. Veneklasen"'
Publikováno v:
Physics Procedia. 1(1):485-504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::921164a5f80f733aeda88fdaa442840b
Autor:
Lee H. Veneklasen
Publikováno v:
Review of Scientific Instruments. 63:5513-5532
Instrumental aspects of low‐energy electron microscopy are reviewed with a view toward the future evolution of this reemergent technology. Both elastically scattered and inelastically excited electrons in the 0–1000‐eV range may be used to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::121bfd6337032ac94c1c7bc80ad2c9a8
https://doi.org/10.1063/1.1143377
https://doi.org/10.1063/1.1143377
Autor:
Lee H. Veneklasen
Publikováno v:
Ultramicroscopy. 36:76-90
The instrumental design aspects of a spectroscopic low-energy electron microscope for the direct imaging of chemical, topographic and structural features on surfaces are presented. This instrument extends the LEEM concept to include energy-resolved i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d5be30fd487c188110848a33eb898bc
https://doi.org/10.1016/0304-3991(91)90139-w
https://doi.org/10.1016/0304-3991(91)90139-w
Autor:
Lee H. Veneklasen
Publikováno v:
Ultramicroscopy. 36:63-75
The theoretical performance of an optimized direct imaging emission microscope is compared with a scanning Auger microprobe for the chemical mapping of surfaces at high resolution. The comparison criterion is visibility or image signal-to-noise ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f9a8bb255b1b780312e9aadfd7e6a0
https://doi.org/10.1016/0304-3991(91)90138-v
https://doi.org/10.1016/0304-3991(91)90138-v
Publikováno v:
SPIE Proceedings.
Analysis of pattern placement errors has shown a pattern and exposure sequence dependent component of placement error exists that cannot be accounted for by beam and stage positioning errors alone. The interaction of the electron beam (e-beam) with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fce159caff203f42779a62e111716c0
https://doi.org/10.1117/12.373348
https://doi.org/10.1117/12.373348
Autor:
Zoilo C. H. Tan, Terry Mulera, C. Nurmi, Mark A. Gesley, J. Radley, Allan L. Sagle, Lee H. Veneklasen, Keith P. Standiford, John R. Thomas
Publikováno v:
SPIE Proceedings.
Performance data from a prototype 50 kV shaped electron-beam (e-beam) pattern generator is presented. This technology development is targeted towards 180-130 nm device design rules. It will be able to handle 1X NIST X-ray membranes, glass reduction r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830734a21c70e03db248532374cd0e41
https://doi.org/10.1117/12.209157
https://doi.org/10.1117/12.209157
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3052
A set of multiple electron-beam (e-beam) aperture/blanker chips have been fabricated using silicon microelectro-mechanical systems (MEMS) techniques. The aperture sizes range from 8 to 4 μm (nominal) squares, and the chip configurations feature eith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4ac8e8c9f5274bef002bf47be8cd284
https://doi.org/10.1116/1.1321757
https://doi.org/10.1116/1.1321757
Autor:
S. A. Rishton, Lee H. Veneklasen, L. Johnson, H. Kao, I. Finkelstein, U. Hofmann, S. Stovall, V. Boegli
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3138
A method for real-time backscatter correction has been implemented in a 50 keV raster-scan electron-beam mask exposure system. The real-time nature of the correction makes it an attractive, user transparent feature with flexibility to choose the corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82386f4b3d40fe42c347cdbf401409b4
https://doi.org/10.1116/1.1324614
https://doi.org/10.1116/1.1324614
Autor:
Lee H. Veneklasen
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 49:414-415
This speculative discussion is offered in memory of Prof. Ben Siegel's fascination with the science of microscope instrumentation. It views the microscope configuration as a set of tools for creating observational opportunities. The central element i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896ce15ae0df252e1be3171d7f059f06
https://doi.org/10.1017/s0424820100086374
https://doi.org/10.1017/s0424820100086374
Autor:
Lee H. Veneklasen
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:358-359
This paper discusses some of the unique aspects of a spectroscopic emission microscope now being tested in Clausthal. The instrument is designed for the direct parallel imaging of both elastic and inelastic electrons from flat surfaces. Elastic contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6183db475a042b431abd59589b7e92a5
https://doi.org/10.1017/s0424820100180549
https://doi.org/10.1017/s0424820100180549