Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Lee H. Veneklasen"'
Publikováno v:
Physics Procedia. 1(1):485-504
Autor:
Lee H. Veneklasen
Publikováno v:
Review of Scientific Instruments. 63:5513-5532
Instrumental aspects of low‐energy electron microscopy are reviewed with a view toward the future evolution of this reemergent technology. Both elastically scattered and inelastically excited electrons in the 0–1000‐eV range may be used to form
Autor:
Lee H. Veneklasen
Publikováno v:
Ultramicroscopy. 36:76-90
The instrumental design aspects of a spectroscopic low-energy electron microscope for the direct imaging of chemical, topographic and structural features on surfaces are presented. This instrument extends the LEEM concept to include energy-resolved i
Autor:
Lee H. Veneklasen
Publikováno v:
Ultramicroscopy. 36:63-75
The theoretical performance of an optimized direct imaging emission microscope is compared with a scanning Auger microprobe for the chemical mapping of surfaces at high resolution. The comparison criterion is visibility or image signal-to-noise ratio
Publikováno v:
SPIE Proceedings.
Analysis of pattern placement errors has shown a pattern and exposure sequence dependent component of placement error exists that cannot be accounted for by beam and stage positioning errors alone. The interaction of the electron beam (e-beam) with t
Autor:
Zoilo C. H. Tan, Terry Mulera, C. Nurmi, Mark A. Gesley, J. Radley, Allan L. Sagle, Lee H. Veneklasen, Keith P. Standiford, John R. Thomas
Publikováno v:
SPIE Proceedings.
Performance data from a prototype 50 kV shaped electron-beam (e-beam) pattern generator is presented. This technology development is targeted towards 180-130 nm device design rules. It will be able to handle 1X NIST X-ray membranes, glass reduction r
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3052
A set of multiple electron-beam (e-beam) aperture/blanker chips have been fabricated using silicon microelectro-mechanical systems (MEMS) techniques. The aperture sizes range from 8 to 4 μm (nominal) squares, and the chip configurations feature eith
Autor:
S. A. Rishton, Lee H. Veneklasen, L. Johnson, H. Kao, I. Finkelstein, U. Hofmann, S. Stovall, V. Boegli
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3138
A method for real-time backscatter correction has been implemented in a 50 keV raster-scan electron-beam mask exposure system. The real-time nature of the correction makes it an attractive, user transparent feature with flexibility to choose the corr
Autor:
Lee H. Veneklasen
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 49:414-415
This speculative discussion is offered in memory of Prof. Ben Siegel's fascination with the science of microscope instrumentation. It views the microscope configuration as a set of tools for creating observational opportunities. The central element i
Autor:
A. L. Sagle, V. Boegli, U. Hofmann, Lee H. Veneklasen, W. Wang, H. Kao, J. K. Varner, S. A. Rishton
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:2927
We propose a new approach to electron-beam (e-beam) pattern generation, in which the best attributes of raster scan writing are combined with beam shaping. The maximum dimension of the variable shaped flash is equal to the minimum feature size requir