Zobrazeno 1 - 10
of 112
pro vyhledávání: '"Lee Empringham"'
Autor:
Ioannis Almpanis, Paul Evans, Marina Antoniou, Peter M. Gammon, Lee Empringham, Florin Udrea, Phillip A. Mawby, Neophytos Lophithis
Publikováno v:
Key Engineering Materials. 946:125-133
10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe3a682bd4a3a0e3c48591b380f789e
https://doi.org/10.4028/p-21h5lt
https://doi.org/10.4028/p-21h5lt
Autor:
Davide Gottardo, Mauro Di Nardo, Lee Empringham, Jordi Espina, Mark Johnson, Liliana de Lillo, Andrea Stratta
Publikováno v:
IEEE Transactions on Power Electronics. 37:724-737
The application of wide-band gap semiconductors and their integration with other power electronics components (e.g., passives, gate drivers, sensing, thermal management) can meet the growing demand for volume reduction in power electronics systems. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b282db3df16b390a7c58852265290bce
https://doi.org/10.1109/tpel.2021.3094025
https://doi.org/10.1109/tpel.2021.3094025
Autor:
Ioannis Almpanis, Marina Antoniou, Paul Evans, Lee Empringham, Peter Gammon, Florin Udrea, Philip Mawby, Neophytos Lophitis
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1ca19339cf90d777af3c062d850841
https://doi.org/10.1109/ecce50734.2022.9947492
https://doi.org/10.1109/ecce50734.2022.9947492
Autor:
Ioannis Almpanis, Paul Evans, Marina Antoniou, Peter Gammon, Lee Empringham, Florin Udrea, Philip Mawby, Neophytos Lophitis
Publikováno v:
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c0e6e7a0ad579773023387009a91b12
https://doi.org/10.1109/wipdaeurope55971.2022.9936475
https://doi.org/10.1109/wipdaeurope55971.2022.9936475
Autor:
Lee Empringham, Mattia Antonini, Liliana de Lillo, Mark Johnson, Andrea Stratta, Bassem Mouawad
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:3867-3876
Heterogeneous integration and the converter in package concept have been highlighted as enabling technologies to unlock the full potential of silicon carbide (SiC) and gallium nitride (GaN) devices. Control of parasitic elements in the commutation lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07fecd3c6b612085e659c4978a4f366f
https://doi.org/10.1109/jestpe.2020.2989805
https://doi.org/10.1109/jestpe.2020.2989805
Autor:
Lorna Kiamba, Lucelia Rodrigues, Julian Marsh, Eldar Naghiyev, Mark Sumner, Lee Empringham, Liliana De Lillo, Mark Gillott
Publikováno v:
Sustainability; Volume 14; Issue 3; Pages: 1890
Sustainability, Vol 14, Iss 1890, p 1890 (2022)
Sustainability, Vol 14, Iss 1890, p 1890 (2022)
In this paper, the authors examine how a community energy group in the Meadows area of Nottingham in the UK adopted a model of local energy generation and storage as a means of combatting climate change, improving energy efficiency, enhancing energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c64c9b9ee89faf90f69034a702e8c1f3
Publikováno v:
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3278a799a50ee136a2c54cd336d38b2f
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570687
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570687
Autor:
Jordi Espina, Lee Empringham, Liliana de Lillo, Andrea Stratta, Mark Johnson, Davide Gottardo, Mauro Di Nardo
Publikováno v:
2021 IEEE Design Methodologies Conference (DMC).
A higher level of structural and functional integration of semiconductor devices, passive components, sensing, thermal management and control is considered fundamental to unlock wide band gap (WBG) devices full potential and ensure their reliable and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d7aab99451e44badba84406255b4b0a
https://doi.org/10.1109/dmc51747.2021.9529936
https://doi.org/10.1109/dmc51747.2021.9529936
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 6:1831-1839
A novel fast and reliable open circuit fault diagnosis strategy for a Matrix Converter with a Finite Control Set Model Predictive Control strategy is proposed in this paper. Current sensors are located ahead of the clamp circuit to measure the output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1100fa385c5b444265258d3a11ebdcb
https://doi.org/10.1109/jestpe.2018.2856460
https://doi.org/10.1109/jestpe.2018.2856460
Autor:
Christina DiMarino, Liliana de Lillo, Jingru Dai, C. Mark Johnson, Jordi Espina, Bassem Mouawad, Behzad Ahmadi, Lee Empringham
Publikováno v:
International Symposium on Microelectronics. 2018:000069-000074
Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d075ac785513b9404ce6e9985ce62719
https://doi.org/10.4071/2380-4505-2018.1.000069
https://doi.org/10.4071/2380-4505-2018.1.000069