Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Lee Chia-Fu"'
Autor:
Harry H. L. Chuang, Hung-Chang Yu, Lee Chia-Fu, Yi-Chun Shih, Hon-Jarn Lin, Ku-Feng Lin, Jonathan Chang, Yu-Lin Chen, Ta-Ching Yeh, Yu-Der Chih, Po-Hao Lee, Chang Yen-An
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:1029-1038
A new MRAM reference and sensing circuit that can achieve $\mu \text{A}$ resolution and 17.5 nS read access from −40 °C to 125 °C is presented in this paper. A trimmable current-mode latch-type sense amplifier (CLSA) with hybrid-resistance-refere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc38b9f864ca3d30a60c04e02898f311
https://doi.org/10.1109/jssc.2018.2889106
https://doi.org/10.1109/jssc.2018.2889106
Autor:
Cheng-Han Lu, Yu-Lin Chen, Yen-Huei Chen, Mori Haruki, Rawan Naous, Kerem Akarvardar, Yi-Chun Shih, Zhao Wei-Chang, Dar Sun, Yu-Der Chih, Lee Chia-Fu, Tsung-Yung Jonathan Chang, Mahmut E. Sinangil, Po-Hao Lee, Meng-Fan Chang, Hung-jen Liao, Tan-Li Chou, Yih Wang, Fujiwara Hidehiro, Chieh-Pu Lo
Publikováno v:
ISSCC
From the cloud to edge devices, artificial intelligence (AI) and machine learning (ML) are widely used in many cognitive tasks, such as image classification and speech recognition. In recent years, research on hardware accelerators for AI edge device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f02840e0b9986b888ee405272a4cca03
https://doi.org/10.1109/isscc42613.2021.9365766
https://doi.org/10.1109/isscc42613.2021.9365766
Autor:
Harry Chuang, Po-Hao Lee, Hon-Jarn Lin, Kuei-Hung Shen, Yu-Lin Chen, Tsung-Yung Jonathan Chang, Meng-Chun Shih, Chieh-Pu Lo, Lee Chia-Fu, Chang Yen-An, Yu-Der Chih, Yi-Chun Shih
Publikováno v:
ISSCC
STT-MRAM is a promising solution for next-generation embedded non-volatile memory (NVM), supporting a wide range of applications. Compared to traditional embedded Flash [1]–[2], STT-MRAM is a CMOS-compatible low-temperature back-end-of-the-line (BE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a98d99f11dfa2a029775badc6f7092
https://doi.org/10.1109/isscc19947.2020.9062955
https://doi.org/10.1109/isscc19947.2020.9062955
Autor:
Jian-Cheng Huang, William J. Gallagher, Christine Bair, Eric Chien, J. J. Wu, C.Y. Wang, Lee Chia-Fu, Meng-Chun Shih, Wayne Wang, Kuei-Hung Shen, Roger Wang, Chiang Tien-Wei, Yi-Chun Shih, George Lee, Harry Chuang
Publikováno v:
VLSI Circuits
MRAM can play a variety of on-chip memory roles in advanced VLSI technology spanning from high retention, solder-reflow-capable non-volatile memory (NVM) to dense non-volatile or high retention working RAMs. This paper describes results for a solder-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::939cbd8ea519fc261c477cff97b441c3
https://doi.org/10.23919/vlsit.2019.8776547
https://doi.org/10.23919/vlsit.2019.8776547
Autor:
Chang Yen-An, Ku-Feng Lin, Lee Chia-Fu, Po-Hao Lee, Yi-Chun Shih, Yu-Lin Chen, Hon-Jarn Lin, Jonathan Chang, Hung-Chang Yu, Ta-Ching Yeh, Yu-Der Chih, Harry Chuang
Publikováno v:
VLSI Circuits
A new MRAM reference and sensing circuit that can achieve < ±1μA resolution and 17.5nS read access from −40C to 125C is presented in this paper. A trimmable current-mode latch-type sense amplifier (CLSA) with hybrid-resistance-reference (HRR) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6c13f66a18e41ef962082a6c10b75b8
https://doi.org/10.1109/vlsic.2018.8502260
https://doi.org/10.1109/vlsic.2018.8502260
Akademický článek
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Publikováno v:
In Tetrahedron 2001 57(28):5991-6001
Publikováno v:
A-SSCC
Resistive RAM (ReRAM) is an attractive candidate for next generation embedded nonvolatile memory [1][2], with several advantages compared to conventional flash technology. First, ReRAM is a CMOS-compatible low temperature back-end of line (BEOL) memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bea130c37b2d18507d1cb53912f4416
https://doi.org/10.1109/asscc.2017.8240203
https://doi.org/10.1109/asscc.2017.8240203
Publikováno v:
In Tetrahedron 2000 56(47):9269-9279