Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Lee,Meng Lung"'
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Scaling of TEM specimen thickness is vital to avoid overlapped semiconductor device structures due to the shrinking of device geometry and to obtain good high-resolution TEM images. Nevertheless, thinner TEM specimen fabricated by conventional ex-sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1419907052c8920063b7d06b6931e5
https://doi.org/10.1109/ipfa.2015.7224349
https://doi.org/10.1109/ipfa.2015.7224349
Autor:
Lee,Meng Lung, 李孟龍
103
With the developing smartphone industry, the smartphone gaming market has also expanded rapidly. To investigate the intense competition, this study employed the Engel-Kollat-Blackwell (EKB) model, a consumer decision-making model, to examine
With the developing smartphone industry, the smartphone gaming market has also expanded rapidly. To investigate the intense competition, this study employed the Engel-Kollat-Blackwell (EKB) model, a consumer decision-making model, to examine
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11088465941287471726
Autor:
Lee Meng Lung, Liew Kaeng Nan
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Conventional FIB ex-situ lift-out is the most common technique for TEM specimen preparation. However, the FIB milling induced artifacts limit the TEM image quality. By a novel double cross-sectional lamellae preparation, the sidewall amorphous layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b21d74a1c035893bc858e277691d8f6
https://doi.org/10.1109/ipfa.2013.6599190
https://doi.org/10.1109/ipfa.2013.6599190
Autor:
Lee Meng Lung, Liew Kaeng Nan
Publikováno v:
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48d7ec6d95d421684d1bf494ae2d9536
https://doi.org/10.1109/ipfa.2012.6306249
https://doi.org/10.1109/ipfa.2012.6306249
Autor:
Liew Kaeng Nan, Lee Meng Lung
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2013, p404-407, 4p
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2015, pi-xl, 40p
Autor:
Nan, Liew Kaeng, Lung, Lee Meng
Publikováno v:
2012 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits; 1/ 1/2012, p1-3, 3p
Autor:
ASM International, International Symposium for Testing and Failure Analysis/2011, Electronic Device Failure Analysis Society
This volume features the latest research and practical data from the premier event for the microelectronics failure analysis community. The papers cover a wide range of testing and failure analysis topics of practical value to anyone working to detec