Zobrazeno 1 - 10
of 419
pro vyhledávání: '"Lee, Tien‐Lin"'
Autor:
Klein, Benedikt P., Stoodley, Matthew A., Deyerling, Joel, Rochford, Luke A., Morgan, Dylan B., Hopkinson, David, Sullivan-Allsop, Sam, Eratam, Fulden, Sattler, Lars, Weber, Sebastian M., Hilt, Gerhard, Generalov, Alexander, Preobrajenski, Alexei, Liddy, Thomas, Williams, Leon B. S., Lee, Tien-Lin, Saywell, Alex, Gorbachev, Roman, Haigh, Sarah J., Allen, Christopher, Auwärter, Willi, Maurer, Reinhard J., Duncan, David A.
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precur
Externí odkaz:
http://arxiv.org/abs/2411.02676
Autor:
Schmitt, Matthias, Biswas, Deepnarayan, Tkach, Olena, Fedchenko, Olena, Liu, Jieyi, Elmers, Hans-Joachim, Sing, Michael, Claessen, Ralph, Lee, Tien-Lin, Schönhense, Gerd
Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of
Externí odkaz:
http://arxiv.org/abs/2406.00771
Autor:
Hoang, Le Phuong, Spasojevic, Irena, Lee, Tien-Lin, Pesquera, David, Rossnagel, Kai, Zegenhagen, Jörg, Catalan, Gustau, Vartanyants, Ivan A., Scherz, Andreas, Mercurio, Giuseppe
Understanding the mechanisms underlying a stable polarization at the surface of ferroelectric thin films is of particular importance both from a fundamental point of view and to achieve control of the surface polarization itself. In this study, it is
Externí odkaz:
http://arxiv.org/abs/2309.01673
Autor:
Kalha, Curran, Ratcliff, Laura E., Colombi, Giorgio, Schlueter, Christoph, Dam, Bernard, Gloskovskii, Andrei, Lee, Tien-Lin, Thakur, Pardeep K., Bhatt, Prajna, Zhu, Yujiang, Osterwalder, Jürg, Offi, Francesco, Panaccione, Giancarlo, Regoutz, Anna
Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodyn
Externí odkaz:
http://arxiv.org/abs/2305.16053
Autor:
Schmitt, Cedric, Erhardt, Jonas, Eck, Philipp, Schmitt, Matthias, Lee, Kyungchan, Wagner, Tim, Keßler, Philipp, Kamp, Martin, Kim, Timur, Cacho, Cephise, Lee, Tien-Lin, Sangiovanni, Giorgio, Moser, Simon, Claessen, Ralph
Publikováno v:
Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation. Nat Commun 15, 1486 (2024)
Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulat
Externí odkaz:
http://arxiv.org/abs/2305.07807
Autor:
Kalha, Curran, Thakur, Pardeep K., Lee, Tien-Lin, Reisinger, Michael, Zechner, Johannes, Nelhiebel, Michael, Regoutz, Anna
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approa
Externí odkaz:
http://arxiv.org/abs/2301.02577
Autor:
Ratcliff, Laura E., Oshima, Takayoshi, Nippert, Felix, Janzen, Benjamin M., Kluth, Elias, Goldhahn, Rüdiger, Feneberg, Martin, Mazzolini, Piero, Bierwagen, Oliver, Wouters, Charlotte, Nofal, Musbah, Albrecht, Martin, Swallow, Jack E. N., Jones, Leanne A. H., Thakur, Pardeep K., Lee, Tien-Lin, Kalha, Curran, Schlueter, Christoph, Veal, Tim D., Varley, Joel B., Wagner, Markus R., Regoutz, Anna
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of appli
Externí odkaz:
http://arxiv.org/abs/2205.04412
Autor:
Rhyan, Paul, Blowey, Philip James, Sohail, Billal S., Rochford, Luke A., Duncan, David A., Lee, Tien-Lin, Starrs, Peter, Costantini, Giovanni, Maurer, Reinhard J., Woodruff, David Phillip
A quantitative structural investigation is reported, aimed at resolving the issue of whether substrate adatoms are incorporated into the monolayers formed by strong molecular electron acceptors deposited onto metallic electrodes. A combination of nor
Externí odkaz:
http://arxiv.org/abs/2203.08028
Autor:
Lin, You-Ron, Franke, Markus, Parhizkar, Shayan, Raths, Miriam, Yu, Victor Wen-zhe, Lee, Tien-Lin, Soubatch, Serguei, Blum, Volker, Tautz, F. Stefan, Kumpf, Christian, Bocquet, François C.
Publikováno v:
Phys. Rev. Materials, 6, 064002 (2022)
In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional (2D) layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth
Externí odkaz:
http://arxiv.org/abs/2203.00985
Autor:
Gabel, Judith, Pickem, Matthias, Scheiderer, Philipp, Dudy, Lenart, Leikert, Berengar, Fuchs, Marius, Stübinger, Martin, Schmitt, Matthias, Küspert, Julia, Sangiovanni, Giorgio, Tomczak, Jan M., Held, Karsten, Lee, Tien-Lin, Claessen, Ralph, Sing, Michael
Publikováno v:
Adv. Electron. Mater. 2021, 2101006
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to
Externí odkaz:
http://arxiv.org/abs/2202.10778