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pro vyhledávání: '"Lee, S.-B"'
The interplay of charge, spin, orbital and lattice degrees of freedom has recently received great interest due to its potential to improve the magnetocaloric effect (MCE) for the purpose of magnetic cooling applications. Here we propose a new mechani
Externí odkaz:
http://arxiv.org/abs/1902.02576
Publikováno v:
Phys. Rev. B 93, 075149 (2016)
Heavy fermion (HF) materials exhibit a rich array of phenomena due to the strong Kondo coupling between their localized moments and itinerant electrons. A central question in their study is to understand the interplay between magnetic order and charg
Externí odkaz:
http://arxiv.org/abs/1508.05444
Akademický článek
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Publikováno v:
Nanotechnology 24, 325202 2013
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroformi
Externí odkaz:
http://arxiv.org/abs/1304.4078
The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reli
Externí odkaz:
http://arxiv.org/abs/1006.5132
Autor:
Lee, S. B., Kim, A., Lee, J. S., Chang, S. H., Yoo, H. K., Noh, T. W., Kahng, B., Lee, M. -J., Kim, C. J., Kang, B. S.
The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can wo
Externí odkaz:
http://arxiv.org/abs/1003.1390
Autor:
Lee, S. B., Park, S., Lee, J. S., Chae, S. C., Chang, S. H., Jung, M. H., Jo, Y., Kahng, B., Kang, B. S., Lee, M. -J., Noh, T. W.
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five o
Externí odkaz:
http://arxiv.org/abs/0908.1606
In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the re
Externí odkaz:
http://arxiv.org/abs/0903.1490
Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement and practical applications. Using NiO capacitors, we investigated the
Externí odkaz:
http://arxiv.org/abs/0810.4043
Autor:
Lee, S. B., Chae, S. C., Chang, S. H., Lee, J. S., Park, S., Jo, Y., Seo, S., Kahng, B., Noh, T. W.
We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%. This
Externí odkaz:
http://arxiv.org/abs/0810.0886