Zobrazeno 1 - 10
of 403
pro vyhledávání: '"Lee, Minjoo"'
Publikováno v:
In Journal of Hazardous Materials 15 September 2024 477
Publikováno v:
In Chemical Engineering Journal 15 September 2024 496
Autor:
Basri, Gibor, Streichenberger, Tristan, McWard, Connor, Edmond IV, Lawrence, Tan, Joanne, Lee, Minjoo, Melton, Trey
We present a method that utilizes autocorrelation functions from long-term precision broadband differential light curves to estimate the average lifetimes of starspot groups for two large sample of Kepler stars: stars with and without previously know
Externí odkaz:
http://arxiv.org/abs/2110.13284
Autor:
Dhingra, Pankul, Su, Patrick, Li, Brian D., Hool, Ryan D., Muhowski, Aaron J., Kim, Mijung, Wasserman, Daniel, Dallesasse, John, Lee, Minjoo Larry
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonid
Externí odkaz:
http://arxiv.org/abs/2109.12419
PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. How
Externí odkaz:
http://hdl.handle.net/1721.1/3830
Autor:
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., Lee, Minjoo L., Chi, D.Z.
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of
Externí odkaz:
http://hdl.handle.net/1721.1/3724
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can als
Externí odkaz:
http://hdl.handle.net/1721.1/3726
Autor:
Pitera, Arthur J., Groenert, M. E., Yang, V. K., Lee, Minjoo L., Leitz, Christopher W., Taraschi, G., Cheng, Zhiyuan, Fitzgerald, Eugene A.
A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/S
Externí odkaz:
http://hdl.handle.net/1721.1/3714
Autor:
Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L., Nayfeh, Hasan, Pitera, Arthur J., Hoyt, Judy L., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point o
Externí odkaz:
http://hdl.handle.net/1721.1/3671
Autor:
Lee, Minjoo L., Leitz, Christopher W., Cheng, Zhiyuan, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Siâ.âGeâ.â virtual substrates. The poor interface between silicon dioxide (SiOâ) and the Ge channel was eliminate
Externí odkaz:
http://hdl.handle.net/1721.1/3989