Atomic layer deposition of tin monosulfide thin film using Sn(acac)2 and H2S

Autor: Lee, Dowwook, Jeon, Hyeongtag

Publikováno v: In Vacuum January 2025 231 Part A

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Control of Transfer Characteristics of Atomic Layer Deposited Al-Doped SnO2 Thin Film through a Post-Annealing Process.

Autor: Kim, Byunguk, Park, Hyunwoo, Lee, Sungkwon, Lee, Dowwook, Jung, Chanwon, Jeon, Hyeongtag

Publikováno v: ECS Journal of Solid State Science & Technology; May2022, Vol. 11 Issue 5, p121-127, 7p

Atomic layer deposition of SnS 2 film on a precursor pre-treated substrate.

Autor: Kim J; Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04673, Republic of Korea., Lee D; Division of Materials Science and Engineering, Hanyang University, Seoul, 04673, Republic of Korea., Bae J; Division of Materials Science and Engineering, Hanyang University, Seoul, 04673, Republic of Korea., Lee T; Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04673, Republic of Korea., Jeon H; Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04673, Republic of Korea.; Division of Materials Science and Engineering, Hanyang University, Seoul, 04673, Republic of Korea.

Publikováno v: Nanotechnology [Nanotechnology] 2024 Feb 27; Vol. 35 (20). Date of Electronic Publication: 2024 Feb 27.