Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Leda Lunardi"'
Autor:
Ram Adapa, Anuradha Annaswamy, Nirwan Ansari, Jun Cai, Jose Capmany, Kun-Shan Chen, J.-C. Chiao, M. Jamal Deen, John W. Evans, Shaikh Fattah, Aura Ganz, Amitava Ghosh, Dmitry Goldgof, Josep M. Guerrero, Melinda Hodkiewicz, Abbas Jamalipour, Weihua Jiang, Lina Karam, Okyay Kaynak, Joy Laskar, Gianluca Lazzi, Victor C. M. Leung, Shengtao Li, Qilian Liang, Jian-Yu Lu, Leda Lunardi, Michael Pecht, Mugen Peng, Hugo Proenca, Yi Qian, Zhihua Qu, Mehrdad Saif, Ali Serpenguzel, Levent Sevgi, Ashitey Trebi-Ollennu, Leung Tsang, Ge Wang, Andreas Weisshaar, Enrico Zio
Publikováno v:
IEEE Access, Vol 9, Pp i-ix (2021)
Ram Adapa (Fellow, IEEE) received the B.S. degree from Jawaharlal Nehru Technological University, India, the M.S. degree from IIT Kanpur, India, and the Ph.D. degree from the University of Waterloo, ON, Canada, all in electrical engineering.
Externí odkaz:
https://doaj.org/article/3a4003ecbaa749ea869e8899dda99855
Autor:
Leda Lunardi, Pedro P. Vergara
Publikováno v:
IEEE Transactions on Electron Devices. 68:6240-6248
Autor:
John W. Evans, Ashitey Trebi-Ollennu, Ge Wang, Nirwan Ansari, Melinda Hodkiewicz, Jun Cai, Ali Serpengüzel, Andreas Weisshaar, Anuradha M. Annaswamy, Leung Tsang, Abbas Jamalipour, Leda Lunardi, Gianluca Lazzi, Michael Pecht, Lina J. Karam, Joy Laskar, Mugen Peng, Amitava Ghosh, Qilian Liang, M. Jamal Deen, Dmitry B. Goldgof, Josep M. Guerrero, Shengtao Li, Shaikh Anowarul Fattah, Victor C. M. Leung, Yi Qian, José Capmany, Jian-Yu Lu, Enrico Zio, Aura Ganz, Zhihua Qu, Hugo Proença, Kun-Shan Chen, Levent Sevgi, R. Adapa, Okyay Kaynak, Weihua Jiang, J.-C. Chiao, Mehrdad Saif
Publikováno v:
IEEE Access. 9:i-ix
Ram Adapa (Fellow, IEEE) received the B.S. degree from Jawaharlal Nehru Technological University, India, the M.S. degree from IIT Kanpur, India, and the Ph.D. degree from the University of Waterloo, ON, Canada, all in electrical engineering.
Autor:
Ram Adapa, Anuradha Annaswamy, Nirwan Ansari, Jun Cai, Jose Capmany, Kun-Shan Chen, J.-C. Chiao, M. Jamal Deen, John W. Evans, Shaikh Fattah, Aura Ganz, Amitava Ghosh, Dmitry Goldgof, Josep M. Guerrero, Melinda Hodkiewicz, Abbas Jamalipour, Weihua Jiang, Lina Karam, Okyay Kaynak, Joy Laskar, Gianluca Lazzi, Victor C. M. Leung, Shengtao Li, Qilian Liang, Jian-Yu Lu, Leda Lunardi, Michael Pecht, Mugen Peng, Hugo Proenca, Yi Qian, Zhihua Qu, Mehrdad Saif, Ali Serpenguzel, Levent Sevgi, Ashitey Trebi-Ollennu, Leung Tsang, Ge Wang, Andreas Weisshaar, Enrico Zio
Publikováno v:
IEEE Access, Vol 9, Pp i-ix (2021)
Ram Adapa (Fellow, IEEE) received the B.S. degree from Jawaharlal Nehru Technological University, India, the M.S. degree from IIT Kanpur, India, and the Ph.D. degree from the University of Waterloo, ON, Canada, all in electrical engineering.
Publikováno v:
2018 ASEE Annual Conference & Exposition Proceedings.
Autor:
Leda Lunardi
Publikováno v:
Women in Microelectronics ISBN: 9783030468934
Few years ago when preparing for an invited talk to a primarily female audience composed of middle school students with their mothers, counselors, and teachers I decided to display my career as winding path timeline. It started when I deviated from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba3868a5efa82d27b8442fcc411c2f4
https://doi.org/10.1007/978-3-030-46377-9_8
https://doi.org/10.1007/978-3-030-46377-9_8
Autor:
Alice Cline Parker, Leda Lunardi
Publikováno v:
Women in Microelectronics ISBN: 9783030468934
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b462a4e6d35282e7fdf0f62795538ca
https://doi.org/10.1007/978-3-030-46377-9_1
https://doi.org/10.1007/978-3-030-46377-9_1
Autor:
Alice Cline Parker, Leda Lunardi
This book contains stories of women engineers'paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic's stories of Jane Go
Publikováno v:
IEEE Transactions on Electron Devices. 63:2163-2168
Using an idealized semianalytical model of charge transport for InAs-based tunneling FET, it is shown that the output and transfer characteristics can be accurately reproduced and could be used to develop compact models. The use of a mathematical app
Publikováno v:
2017 ASEE Annual Conference & Exposition Proceedings.