Zobrazeno 1 - 10
of 427
pro vyhledávání: '"Lebeau, James M."'
Autor:
Zhu, Menglin, Xu, Michael, Qi, Yubo, Gilgenbach, Colin, Kim, Jieun, Zhang, Jiahao, Denzer, Bridget R., Martin, Lane W., Rappe, Andrew M., LeBeau, James M.
Introducing structural and/or chemical heterogeneity into otherwise ordered crystals can dramatically alter material properties. Lead-based relaxor ferroelectrics are a prototypical example, with decades of investigation having connected chemical and
Externí odkaz:
http://arxiv.org/abs/2408.11685
Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S,Se)$_3$ thin films grown on LaAlO$_3$ by molecular be
Externí odkaz:
http://arxiv.org/abs/2407.21269
Autor:
Taheri-Mousavi, S. Mohadeseh, Xu, Michael, Hengsbach, Florian, Houser, Clay, Ge, Zhaoxuan, Glaser, Benjamin, Wei, Shaolou, Schaper, Mikro, LeBeau, James M., Olson, Greg B., Hart, A. John
Additively manufactured (AM) structural components with complex geometries and tailored properties at voxel-size resolution will lead to significant leap in performance in various critical engineering applications. However, at each voxel, we first ne
Externí odkaz:
http://arxiv.org/abs/2406.17457
Autor:
Ye, Kevin, Sadeghi, Ida, Xu, Michael, Van Sambeek, Jack, Cai, Tao, Dong, Jessica, Kothari, Rishabh, LeBeau, James M., Jaramillo, R.
We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structur
Externí odkaz:
http://arxiv.org/abs/2403.09016
Autor:
Zhu, Menglin, Xu, Michael, Yun, Yu, Wu, Liyan, Shafir, Or, Gilgenbach, Colin, Martin, Lane W., Grinberg, Ilya, Spanier, Jonathan E., LeBeau, James M.
Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties. Characterizing the structure of thes
Externí odkaz:
http://arxiv.org/abs/2403.04904
Autor:
Qiao, Siqi, Driesch, Nils von den, Chen, Xi, Trellenkamp, Stefan, Lentz, Florian, Krause, Christoph, Bennemann, Benjamin, Brazda, Thorsten, LeBeau, James M., Pawlis, Alexander
ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cav
Externí odkaz:
http://arxiv.org/abs/2402.15349
Autor:
Grimley, Everett D., Frisone, Sam, Schenk, Tony, Park, Min Hyuk, Mikolajick, Thomas, Fancher, Chris M., Jones, Jacob L., Schroeder, Uwe, LeBeau, James M.
An abstract is not available for this content.
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A78788
https://tud.qucosa.de/api/qucosa%3A78788/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A78788/attachment/ATT-0/
Though ferroelectric HfO₂ thin films are now well characterized, little is currently known about their grain substructure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization,
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80508
https://tud.qucosa.de/api/qucosa%3A80508/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80508/attachment/ATT-0/
Autor:
Fengler, Franz P. G., Nigon, Robin, Muralt, Paul, Grimley, Everett D., Sang, Xiahan, Sessi, Violetta, Hentschel, Rico, LeBeau, James M., Mikolajick, Thomas, Schroeder, Uwe
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstab
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80496
https://tud.qucosa.de/api/qucosa%3A80496/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80496/attachment/ATT-0/
Machine-learned interatomic potentials (MLIPs) show promise in accurately describing the physical properties of materials, but there is a need for a higher throughput method of validation. Here, we demonstrate using that MLIPs and molecular dynamics
Externí odkaz:
http://arxiv.org/abs/2303.02519