Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Leary O. A. Myers"'
Publikováno v:
MRS Proceedings. 163
Beryllium is an effective p-dopant in GaAs and AlGaAs and plays an important role in device characterizations of hetero bipolar transistors. This work addresses the doping and mobility properties for two series of beryllium-doped samples: GaAs and Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d04a9384bf4a42903b73d96035626cfa
https://doi.org/10.1557/proc-163-881
https://doi.org/10.1557/proc-163-881
Autor:
M. G. Spencer, Leary O. A. Myers
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:1259
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88595c03b593a91b09e8024839af0449
https://doi.org/10.1116/1.583492
https://doi.org/10.1116/1.583492