n-type CdTe:In for photovoltaics: in situ doping, type verification and compensation effects

Autor: Theodore D C Hobson, Luke Thomas, Laurie J Phillips, Leanne A H Jones, Matthew J Smiles, Christopher H Don, Pardeep K Thakur, Huw Shiel, Stephen Campbell, Vincent Barrioz, Vin Dhanak, Tim Veal, Jonathan D Major, Ken Durose

Publikováno v: JPhys Energy, Vol 5, Iss 4, p 045012 (2023)

We explored the in-situ doping of cadmium telluride thin films with indium to produce n-type absorbers as an alternative to the near-universal choice of p-type for photovoltaic devices. The films were grown by close space sublimation from melt-synthe

Externí odkaz: https://doaj.org/article/0c7da6d80f7b4907a5c4c5f47b25841d

Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2)

Autor: Leanne A. H. Jones, Zongda Xing, Jack E. N. Swallow, Huw Shiel, Thomas J. Featherstone, Matthew J. Smiles, Nicole Fleck, Pardeep K. Thakur, Tien-Lin Lee, Laurence J. Hardwick, David O. Scanlon, Anna Regoutz, Tim D. Veal, Vinod R. Dhanak

Publikováno v: The Journal of Physical Chemistry C. 126:21022-21033

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3dbb53d2b0850aa82269193ea1d045d
https://doi.org/10.1021/acs.jpcc.2c05100

Tackling disorder in γ-Ga2O3

Autor: Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien‐Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz

Publikováno v: Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217

Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a87a2bd887303dc342a2f7671d87550a

Tackling Disorder in γ-Ga

Autor: Laura E, Ratcliff, Takayoshi, Oshima, Felix, Nippert, Benjamin M, Janzen, Elias, Kluth, Rüdiger, Goldhahn, Martin, Feneberg, Piero, Mazzolini, Oliver, Bierwagen, Charlotte, Wouters, Musbah, Nofal, Martin, Albrecht, Jack E N, Swallow, Leanne A H, Jones, Pardeep K, Thakur, Tien-Lin, Lee, Curran, Kalha, Christoph, Schlueter, Tim D, Veal, Joel B, Varley, Markus R, Wagner, Anna, Regoutz

Publikováno v: Advanced materials (Deerfield Beach, Fla.). 34(37)

Ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::13ea3a59708623d810b3971c04d9cbe2
https://pubmed.ncbi.nlm.nih.gov/35866491

Ge 4s2 lone pairs and band alignments in GeS and GeSe for photovoltaics

Autor: Huw Shiel, Pardeep K. Thakur, Jack E. N. Swallow, Vinod R. Dhanak, Holly J. Edwards, Tien-Lin Lee, Thomas J. Featherstone, Matthew J. Smiles, Jonathan M. Skelton, Leanne A. H. Jones, Tim D. Veal, Philip A. E. Murgatroyd

Publikováno v: Smiles, M J, Skelton, J, Shiel, H, Jones, L A H, Swallow, J, Edwards, H, Featherstone, T, Murgatroyd, P, Thakur, P K, Lee, T, Dhanak, V & Veal, T 2021, ' Ge 4s2 Lone Pairs and Band Alignments in GeS and GeSe for photovoltaics ', Journal of Materials Chemistry A . https://doi.org/10.1039/D1TA05955F

The Engineering and Physical Sciences Research Council (EPSRC) is acknowledged for providing funding to M. J. S., J. E. N. S, and T. J. F. (Grant No. EP/L01551X/1), H. S. (Grant No. EP/N509693/1), L. A. H. J. (Grant No. EP/R513271/1), and V. R. D. an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::141054816db3924a1cad21328b292b7e
https://doi.org/10.1039/d1ta05955f