Zobrazeno 1 - 10
of 15 080
pro vyhledávání: '"Leakage current"'
Publikováno v:
Chengshi guidao jiaotong yanjiu, Vol 27, Iss 9, Pp 255-259 (2024)
Objective Over high humidity in the operating environment of metro train auxiliary power supply system will lead to high leakage current of IGBT (insulated gate bipolar transistor), which may further cause the auxiliary converter failure. Therefore,
Externí odkaz:
https://doaj.org/article/dfe8581cfdc64a4d8a4c4e96a384c4cb
Publikováno v:
Emerging Science Journal, Vol 8, Iss 1, Pp 310-325 (2024)
The performance of outdoor insulators in transmission lines may deteriorate due to aging and can even be enhanced by the presence of pollutants. Leakage current (LC) measurement is one of the most effective methods to diagnose the insulator condition
Externí odkaz:
https://doaj.org/article/d70aeaada69049d7bedc5f522b7d3b9e
Publikováno v:
Heliyon, Vol 10, Iss 14, Pp e34143- (2024)
Due to the ever-increasing growth of electric energy consumption, the production of high-quality, reliable and high-reliability electricity is very important. Therefore, it is essential to have distribution and sub-transmission networks with a good r
Externí odkaz:
https://doaj.org/article/9ba07d23b2c24dd69830eff97b55b56b
Autor:
Alaaeldien Hassan, Mohamad Abou Houran, Wenjie Chen, Xu Yang, Ahmed Ismail M. Ali, Mustafa Abu-Zaher
Publikováno v:
Heliyon, Vol 10, Iss 11, Pp e32214- (2024)
Typically, parasitic capacitances exist between the ground and the solar panel terminals in grid-connected PV systems. These parasitic capacitances provide a path for a leakage current, which leads to significant safety concerns, observable and serio
Externí odkaz:
https://doaj.org/article/774d56be3a1a445685600c262cf1cbc2
Autor:
Umer Waqas, Muhammad Umar Salman, Muhammad Ahmed Khan, Shahid M. Ramay, Farooq Ahmad, Saira Riaz, Shahid Atiq
Publikováno v:
Journal of Materials Research and Technology, Vol 29, Iss , Pp 2971-2979 (2024)
Magnetoelectric coupling and switching charge density in multiferroics have gained the attention of researchers around the world for energy storage, energy harvesting, and their potential applications for pulsating devices. In multiferroics, the abse
Externí odkaz:
https://doaj.org/article/736d14f8f01d45f48de6e75fa1947dbc
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 548-554 (2024)
Abstract Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation
Externí odkaz:
https://doaj.org/article/e03d86ed28f343f1aa724cb25b1f2149
Autor:
Hu Zhou, Xuan Jian, Shuang Chen, Xin Li, Wei He, Pei Huang, Wei Chen, Jiawei Luo, Xin Zhang, Bingquan Li, Jingang Wang, Xuetao Duan
Publikováno v:
IEEE Access, Vol 12, Pp 52097-52109 (2024)
Leakage current is one of the important parameters reflecting the operation status of distribution network-type surge arresters. At this stage, the polymagnetic current sensor has the advantages of miniaturization and high accuracy for leakage curren
Externí odkaz:
https://doaj.org/article/7ce5b5d39c58456b87658fd96c49cca8
Autor:
Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Alex Bialy, Balaji Raghotamacher, Michael Dudley, Nadeemullah Mahadik, Robert Stahlbush, Mowafak Al-Jassim, Woongje Sung
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 150-158 (2024)
Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temperature (25
Externí odkaz:
https://doaj.org/article/1270876fa2c248cda42a97598fc69977
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.