Zobrazeno 1 - 10
of 267
pro vyhledávání: '"Leadley, D R"'
Autor:
Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., Mauskopf, P. D.
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the si
Externí odkaz:
http://arxiv.org/abs/1603.03309
Publikováno v:
Phys. Rev. Lett. 116, 176802 (2016)
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fra
Externí odkaz:
http://arxiv.org/abs/1512.06985
Autor:
Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prunnila, M., Prest, M. J., Sudiwala, R. V., Whall, T. E., Mauskopf, P. D.
Publikováno v:
Brien et al., Applied Physics Letters, 105, 043509 (2014)
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts bet
Externí odkaz:
http://arxiv.org/abs/1407.2113
Autor:
Prest, M J, Richardson-Bullock, J S, Zhao, Q T, Muhonen, J T, Gunnarsson, D, Prunnila, M, Shah, V A, Whall, T E, Parker, E H C, Leadley, D R
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin
Externí odkaz:
http://arxiv.org/abs/1405.4119
We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits
Externí odkaz:
http://arxiv.org/abs/1405.1093
Publikováno v:
Physical Review B 89, 125401 (2014)
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hos
Externí odkaz:
http://arxiv.org/abs/1405.1087
Autor:
Lever, L., Ikonić, Z., Valavanis, A., Kelsall, R. W., Myronov, M., Leadley, D. R., Hu, Y., Owens, N., Gardes, F. Y., Reed, G. T.
Publikováno v:
Journal of Applied Physics 112(12):123105-123105-7 (2012)
We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch w
Externí odkaz:
http://arxiv.org/abs/1302.7241
The magnetoresistance components $\rho_{xx}$ and $\rho_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measuremen
Externí odkaz:
http://arxiv.org/abs/1204.1144
Publikováno v:
Phys. Rev. B 83, 235318 (2011)
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $\mu \approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate
Externí odkaz:
http://arxiv.org/abs/1112.0743
Autor:
Prest, M. J., Muhonen, J. T., Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., Leadley, D. R.
Publikováno v:
Applied Physics Letters 99, 251908 (2011)
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK
Externí odkaz:
http://arxiv.org/abs/1111.0465